Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Journal ArticleDOI
Accurate strain measurements in highly strained Ge microbridges
Alban Gassenq,Samuel Tardif,Kevin Guilloy,G. Osvaldo Dias,Nicolas Pauc,Ivan Duchemin,Denis Rouchon,Jean-Michel Hartmann,Julie Widiez,Jose M. Escalante,Yann-Michel Niquet,R. Geiger,T. Zabel,Hans Sigg,Jérôme Faist,Alexei Chelnokov,François Rieutord,Vincent Reboud,Vincent Calvo +18 more
TL;DR: In this article, the Raman-strain relation at higher strain using synchrotron-based microdiffraction was established. But, the strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2%.
Journal ArticleDOI
Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures.
Denis Rainko,Zoran Ikonic,Nenad Vukmirović,Daniela Stange,Nils von den Driesch,Detlev Grützmacher,Dan Buca +6 more
TL;DR: It is shown that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations.
Journal ArticleDOI
Single-Crystal Germanium Core Optoelectronic Fibers
Xiaoyu Ji,Ryan L. Page,Subhasis Chaudhuri,Wenjun Liu,Shih Ying Yu,Suzanne E. Mohney,John V. Badding,Venkatraman Gopalan +7 more
Journal ArticleDOI
Reversible Control of In‐Plane Elastic Stress Tensor in Nanomembranes
Javier Martín-Sánchez,Rinaldo Trotta,Giovanni Piredda,Christian Schimpf,Giovanna Trevisi,Luca Seravalli,Paola Frigeri,Sandra Stroj,Thomas Lettner,Marcus Reindl,Johannes S. Wildmann,Johannes Edlinger,Armando Rastelli +12 more
TL;DR: In this paper, the authors present a new class of strain actuators which allow the three components of the inplane stress tensor in a nanomembrane to be independently and reversibly controlled.
Journal ArticleDOI
Emission Engineering in Germanium Nanoresonators
Michele Celebrano,Milena Baselli,Monica Bollani,Jacopo Frigerio,Andrea Bahgat Shehata,Adriano Della Frera,Alberto Tosi,Andrea Farina,Fabio Pezzoli,Johann Osmond,Xiaofei Wu,Bert Hecht,Roman Sordan,Daniel Chrastina,Giovanni Isella,Lamberto Duò,Marco Finazzi,Paolo Biagioni +17 more
TL;DR: In this paper, the smallest germanium waveguide cavity resonators on silicon that can be designed to work around 1.55 μm wavelength were experimentally investigated and observed an almost 30-fold enhancement in the collected spontaneous emission per unit volume when compared to a continuous Germanium film of the same thickness, which is due to an effective combination of excitation enhancement at the pump wavelength, emission enhancement (Purcell effect) at the emission wavelength, and effective beaming by the nanoresonators.
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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High-performance Ge-on-Si photodetectors
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.