Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Analysis of stress distribution in microfabricated germanium with external stressors for enhancement of light emission.
TL;DR: It is found that microfabricated Ge greatly improves the Tensile strain because SiNx on the Ge sidewalls causes a large tensile strain in the direction perpendicular to the substrate.
Patent
Process for producing a strained layer based on germanium-tin
TL;DR: In this article, a process for producing a strained layer based on germanium-tin (GeSn) is described, which includes a step of producing a semiconductor stack containing a layer and having an initial strain value that is non-zero.
Patent
Method of production of a semiconducting structure comprising a strained portion
TL;DR: In this article, a method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding is described, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a supporting layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.
Journal ArticleDOI
Elaboration and characterization of a 200 mm stretchable and flexible ultra-thin semi-conductor film.
L.G. Michaud,C. Castan,M Zussy,Pierre Montmeat,Vincent H. Mareau,Laurent Gonon,F. Fournel,François Rieutord,Samuel Tardif +8 more
TL;DR: This work describes a process for transferring a 200 nm thick, 200 mm wide monocrystalline silicon (mono c-Si) thin film from a Silicon-On-Insulator (SOI) onto a flexible polymer substrate that can be subjected to tensile stress experiments.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.