Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Patent
Engineered band gaps
Ju Li,Xiaofeng Qian,Menghao Wu +2 more
TL;DR: In this paper, the first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice directions is between about 0.000001° and 0.5°, or about a 0.
Journal ArticleDOI
Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)
A. A. Shklyaev,A. V. Latyshev +1 more
TL;DR: The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si, and may have properties interesting for applications.
Journal ArticleDOI
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching
TL;DR: In this paper, the tuning of TMAH and KOH to etch selectively the pure Si preserving the SiGe alloy has been discussed, and the goal of this work is to remove completely the Si under the structures without damaging the Si material present in the Si ge alloys by using a suitable etchant.
Patent
Method for forming a semiconducting portion by epitaxial growth on a strained portion
TL;DR: In this article, the formation of a semiconducting portion ( 60 ) by epitaxial growth on a strained germination portion ( 40 ), comprising the steps in which a cavity ( 21 ) is produced under a structured part ( 11 ) by rendering free a support layer ( 30 ) situated facing the structured part, then being strained.
Journal ArticleDOI
Strain Engineering of Germanium Nanobeams by Electrostatic Actuation.
Arman Ayan,Deniz Turkay,Buse Unlu,Parisa Naghinazhadahmadi,Samad Nadimi Bavil Oliaei,Cicek Boztug,Selcuk Yerci +6 more
TL;DR: It is demonstrated, based on mechanical and electrical simulations, that axial strains over 4% can be achieved without experiencing any mechanical and/or electrical failure and it is anticipated that electrostatic actuation of Ge nanobeams provides a suitable platform for the realization of the on-chip tunable-wavelength infrared light sources that can be monolithically integrated on Si chips.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
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Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.