Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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DatasetDOI
Raw data for 'Fabrication of Ge micro-disks on free-standing SiO2 beams for monolithic light emission'.
Al-Attili, Abdelrahman, Zaher M R,Muhammad Husain,Frederic Y. Gardes,Hideo Arimoto,Shinichi Saito,Naoki Higashitarumizu,Yasuhiko Ishikawa,Satoshi Kako,Yasuhiko Arakawa +8 more
TL;DR: In this article, the raw data for the fabrication of Ge micro-disks on free-standing SiO2 beams for monolithic light emission is presented, along with a detailed discussion of the fabrication process.
Journal ArticleDOI
Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications
Alban Gassenq,Kevin Guilloy,Nicolas Pauc,Denis Rouchon,Julie Widiez,J. Rothman,Jean-Michel Hartmann,Alexei Chelnokov,Vincent Reboud,Vincent Calvo +9 more
TL;DR: In this article, a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate was developed, which allowed the integration of highly strained-Ge on Si platform for MIR-integrated optics.
Dissertation
Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique
TL;DR: In this paper, the authors propose a schema for integration of photonique-photonique in the back-side of a laser hybride III-V/Si with the aim of enabling the fabrication of a back-end-of-line (Back-End Of Line) laser.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.