Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Journal ArticleDOI
Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon
Peter Zaumseil,Markus Andreas Schubert,Yuji Yamamoto,Oliver Skibitzki,Giovanni Capellini,Thomas Schroeder +5 more
TL;DR: In this article, a modified Si nanostructure approach with nanopillars or bars separated by TEOS SiO2 can be used successfully to deposit SiGe dots and lines free of misfit dislocations.
Proceedings ArticleDOI
Tensile-strained Ge/SiGe quantum-well microdisks with overlying SiN x stressors
Ming-Yen Kao,Xiaochi Chen,Yijie Huo,Colleen Shang,Muyu Xue,Kai Zang,Ching-Ying Lu,Edward T. Fei,Yusi Chen,Theodore I. Kamins,James S. Harris +10 more
TL;DR: In this article, the authors demonstrate Ge/SiGe multiple-quantum-well microdisks on Si substrates with SiN x stressors on top, and the strain transferred from the SiNx to the Ge quantum wells are determined by photoluminescence and Raman measurements, and are in agreement with simulation results.
Journal ArticleDOI
GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform
Qimiao Chen,Yong-Joo Jung,Hao Zhou,Shaoteng Wu,Xiao Gong,Yi-Chiau Huang,Kwang Hong Lee,Ling Zhang,Donguk Nam,Jian Liu,Jun Luo,Weijun Fan,Chuan Seng Tan +12 more
TL;DR: In this article , the vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations, showing its potential for electrically injected RCLEDs and VCSELs.
Proceedings ArticleDOI
High-quality and homogeneous 200-mm GeOI wafers processed for high strain induction in Ge
Alban Gassenq,Samuel Tardif,Kevin Guilloy,Nicolas Pauc,Mathieu Bertrand,D. Rouchon,J.M. Hartmann,J. Widiez,J. Rothman,Yann-Michel Niquet,Ivan Duchemin,Jérôme Faist,T. Zabel,Hans Sigg,François Rieutord,A. Chelnokov,V. Reboud,V. Calvo +17 more
TL;DR: In this paper, the authors investigated the material properties of 200mm GeOI wafers and gave then optimized designs of micro-bridge by comparing suspended and landed micro-bridges on different materials.
Proceedings ArticleDOI
High tensile strain transfer into germanium microdisks using all-around strained SiN
A. Ghrib,Moustafa El Kurdi,Mathias Prost,Sébastien Sauvage,Grégoire Beaudoin,Ludovic Largeau,Marc Chaigneau,Razvigor Ossikovski,Isabelle Sagnes,Philippe Boucaud +9 more
TL;DR: In this paper, an optimized homogeneous tensile-strain transfer into germanium microdisks up to around 1.5% biaxial strain is presented.
References
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Journal ArticleDOI
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TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.