Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Buckling-Based Method for Measuring the Strain-Photonic Coupling Effect of GaAs Nanoribbons.
Yuxuan Wang,Ying Chen,Haicheng Li,Li Xiaomin,Hang Chen,Honghong Su,Yuan Lin,Yun Xu,Guofeng Song,Xue Feng +9 more
TL;DR: A strategy to induce continuous strain distribution in GaAs nanoribbons by applying structural buckling is reported, demonstrating the potential application of a buckling configuration to delicately measure and tune the band gap and optoelectronic performance.
Journal ArticleDOI
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool
TL;DR: In this article, the very low temperature epitaxy of pure Ge and of Ge-rich SiGe alloys in a 200mm industrial reduced pressure chemical vapour deposition tool was studied.
Journal ArticleDOI
Progress in piezotronics and piezo-phototronics of quantum materials
Journal ArticleDOI
Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium
TL;DR: In this paper, the authors present a detailed model of light emission in Ge that accurately models inter-valence-band absorption (IVBA) in the presence of strain and other factors such as polarization, doping, and carrier injection.
Journal ArticleDOI
2D hexagonal photonic crystal GeSn laser with 16% Sn content
Q. M. Thai,Nicolas Pauc,J. Aubin,Mathieu Bertrand,Jérémie Chrétien,Alexei Chelnokov,J. M. Hartmann,Vincent Reboud,Vincent Calvo +8 more
TL;DR: In this paper, the authors demonstrate lasing in an optically pumped GeSn photonic crystal membrane with 16% of Sn. The active Ge0.84Sn0.16 layer was grown on a step-graded GeSn buffer, limiting thereby the density of misfit dislocations.
References
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Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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High-performance Ge-on-Si photodetectors
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Electrically pumped hybrid AlGaInAs-silicon evanescent laser
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Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.