Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI
On-chip light sources for silicon photonics
TL;DR: Zhou et al. as discussed by the authors assess the three main contenders for on-chip light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers.
Book
Silicon Photonics Design: From Devices to Systems
TL;DR: In this article, the authors present the state-of-the-art in the field of fabless silicon photonic systems, including the following: 1.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modeling 2.6 Photonic Circuit Modelling 3.7 Physical Layout 2.8 Software Tools Integration 3.4 Code Listings 4.5 Problems 4.7 Problems 5.4 Polarization 5.5 Problem 5.6 Code List
Journal ArticleDOI
Elastic strain engineering for ultralow mechanical dissipation
Amir H. Ghadimi,Sergey A. Fedorov,Nils J. Engelsen,Mohammad J. Bereyhi,Ryan Schilling,Dalziel J. Wilson,Tobias J. Kippenberg +6 more
TL;DR: It is shown how nanoscale stress can be used to realize exceptionally low mechanical dissipation when combined with “soft-clamping”—a form of phononic engineering.
Journal ArticleDOI
Elastic strain engineering for unprecedented materials properties
Ju Li,Zhi-Wei Shan,Evan Ma +2 more
TL;DR: In this article, the elastic strain field is controlled statically or dynamically by varying the six-dimensional elastic strain as continuous variables, which gives new meaning to Richard Feynman's 1959 statement, "There is plenty of room at the bottom".
References
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Journal ArticleDOI
Control of tensile strain in germanium waveguides through silicon nitride layers
A. Ghrib,M. de Kersauson,M. El Kurdi,R. Jakomin,Grégoire Beaudoin,Sébastien Sauvage,Guy Fishman,G. Ndong,Marc Chaigneau,Razvigor Ossikovski,Isabelle Sagnes,Philippe Boucaud +11 more
TL;DR: Germanium ridge waveguides can be tensilely strained using silicon nitride thin films as stressors as discussed by the authors, and the results are supported by 30 band k·p modeling of the electronic structure and the finite element modelling of the strain field.
Journal ArticleDOI
Optimum strain configurations for carrier injection in near infrared Ge lasers
TL;DR: In this paper, the behavior of direct and indirect valleys in Ge and the bandgap shrinking, under different tensile-strain conditions in bulk Ge and Ge quantum well structures are explored using the deformation potential and k·p methods.
Journal ArticleDOI
On the ultimate yield strength of solids
TL;DR: In this article, a method for computing the ultimate tensile and compressive yield stress of germanium and silicon crystals loaded in the [100] direction is presented, which is used as the basis for estimating the ultimate compressive strength of diamond.
Journal ArticleDOI
Strain-induced shift of phonon modes in Si1-xGex alloys
Fabio Pezzoli,Emanuele Grilli,Mario Guzzi,Stefano Sanguinetti,Daniel Chrastina,Giovanni Isella,H. von Känel,E. Wintersberger,J. Stangl,G. Bauer +9 more
TL;DR: In this paper, a theoretical approach to the lattice dynamics of Si 1 - x Ge x alloys within a valence force field framework is discussed, where a modified Keating model, the anharmonic Keating, was employed to perform supercell calculations in order to investigate accurately the three Raman active optical phonon modes.
Journal ArticleDOI
How to convert group-IV semiconductors into light emitters
TL;DR: In this article, the authors review current theoretical attempts to optimize the radiative inter-band transition rates in Si and Ge-based superlattices and show that a nearly 12% hydrostatic expansion would be needed to achieve the same goal.