Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
Citations
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Journal ArticleDOI
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
Simone Assali,Alain Dijkstra,Ang Li,Ang Li,Ang Li,Sebastian Koelling,Marcel A. Verheijen,Marcel A. Verheijen,Luca Gagliano,N. von den Driesch,Dan Buca,PM Paul Koenraad,Jos E. M. Haverkort,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers +14 more
TL;DR: Direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.
Journal ArticleDOI
Tensely strained GeSn alloys as optical gain media
Stephan Wirths,Zoran Ikonic,A. T. Tiedemann,Bernhard Holländer,Toma Stoica,Gregor Mussler,U. Breuer,J.M. Hartmann,A. Benedetti,Stefano Chiussi,Detlev Grützmacher,S. Mantl,Dan Buca +12 more
TL;DR: In this article, the authors present the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well, which can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers.
Journal ArticleDOI
Low-threshold optically pumped lasing in highly strained Ge nanowires
Shuyu Bao,Daeik Kim,Chibuzo Onwukaeme,Shashank Gupta,Krishna C. Saraswat,Kwang Hong Lee,Yeji Kim,Dabin Min,Yongduck Jung,Haodong Qiu,Hong Wang,Eugene A. Fitzgerald,Chuan Seng Tan,Donguk Nam +13 more
TL;DR: In this article, the authors demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium.
Journal ArticleDOI
GeSn heterostructure micro-disk laser operating at 230 K
Quang Minh Thai,Nicolas Pauc,J. Aubin,Mathieu Bertrand,Jérémie Chrétien,Vincent Delaye,Alexei Chelnokov,J. M. Hartmann,Vincent Reboud,Vincent Calvo +9 more
TL;DR: Compared to results reported elsewhere, the increase in maximal lasing temperature is attributed to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% double heterostructure.
Journal ArticleDOI
Excess carrier lifetimes in Ge layers on Si
R. Geiger,Jacopo Frigerio,Martin J. Süess,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,H. Sigg +7 more
TL;DR: In this paper, the excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy.
References
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TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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High-performance Ge-on-Si photodetectors
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Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
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