Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Non-local opto-electrical spin injection and detection in germanium at room temperature
F. Rortais,Carlo Zucchetti,Lavinia Ghirardini,Alberto Ferrari,Céline Vergnaud,Julie Widiez,Alain Marty,Jean-Philippe Attané,Henri Jaffrès,Jean-Marie George,Michele Celebrano,Giovanni Isella,Franco Ciccacci,Marco Finazzi,Federico Bottegoni,Matthieu Jamet +15 more
TL;DR: In this paper, the authors demonstrate injection of pure spin currents in germanium, combined with non-local spin detection blocks at room temperature, using either a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor.
Journal ArticleDOI
Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs
R. Jannesari,Magdalena Schatzl,Florian Hackl,Martin Glaser,Kurt Hingerl,Thomas Fromherz,Friedrich Schäffler +6 more
TL;DR: QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs and coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCs.
Journal ArticleDOI
Parallel Nanoshaping of Brittle Semiconductor Nanowires for Strained Electronics.
Yaowu Hu,Ji Li,Jifa Tian,Yi Xuan,Biwei Deng,Kelly McNear,Daw Gen Lim,Yong P. Chen,Chen Yang,Gary J. Cheng +9 more
TL;DR: The presented nanoshaping of SCNWs provide new ways to manipulate nanomaterials with tunable electrical-optical properties and open up many opportunities for nanoelectronics, the nanoelectedrical-mechanical system, and quantum devices.
Journal ArticleDOI
Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
Tuan T. Tran,Huda Alkhaldi,Hemi H. Gandhi,David Pastor,Larissa Q. Huston,Jennifer Wong-Leung,Michael J. Aziz,James Williams +7 more
TL;DR: In this paper, a capping layer of silicon dioxide was used to suppress the development of the porous structure in germanium during a tin implant at a fluence of 4.5×1016 cm−2 at LN2 temperature.
Journal ArticleDOI
Strain Mapping and Raman Spectroscopy of Bent GaP and GaAs Nanowires.
Hyungsoon Im,Kidong Park,Jundong Kim,Do Yeon Kim,Jinha Lee,Jung Ah Lee,Jeunghee Park,Jae-Pyoung Ahn +7 more
TL;DR: This work synthesized single-crystalline zinc blende phase GaP and GaAs NWs using the chemical vapor transport method and visualized their bending strains with high precision using the nanobeam electron diffraction technique, providing new insight into the bending strain of III–V semiconductors.
References
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TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
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Journal ArticleDOI
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