Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
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TLDR
In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.Abstract:
Highly strained germanium on silicon samples with up to 3.1% uniaxial strain are fabricated and then investigated by Raman spectroscopy. During optical pumping, changes in both the emission wavelength and output power are observed, indicating that bandgap modification and optical gain are occurring.read more
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Posted Content
Stress engineering with silicon nitride stressors for Ge-on-Si lasers
TL;DR: Side and top silicon nitride stressors were proposed and shown to be effective in reducing the threshold current and improving the wall-plug efficiency of Ge-on-Si lasers and provide an effective way to improve the Ge laser performance.
Journal ArticleDOI
Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement
Bader Alharthi,Joshua M. Grant,Wei Dou,Perry C. Grant,Aboozar Mosleh,Aboozar Mosleh,Aboozar Mosleh,Wei Du,Wei Du,Mansour Mortazavi,Baohua Li,Hameed A. Naseem,Shui-Qing Yu +12 more
TL;DR: In this article, Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE) and Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature.
Journal ArticleDOI
Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique
TL;DR: The fully complementary metal-oxide-semiconductor (CMOS) compatible, simple and scalable process suggest that the Ge heterostructure NW is promising for low cost, high performance near-infrared or short wavelength infrared focal plane array applications.
Journal ArticleDOI
Enhanced light emission from improved homogeneity in biaxially suspended Germanium membranes from curvature optimization.
Daniel Burt,Abdelrahman Al-Attili,Zuo Li,Frederic Y. Gardes,Moïse Sotto,Naoki Higashitarumizu,Yasuhiko Ishikawa,Katsuya Oda,Osvaldo M. Querin,Shinichi Saito,Robert W. Kelsall +10 more
TL;DR: A novel geometric approach and finite element modelling structures with improved strain homogeneity were designed and fabricated and a PL enhancement of up to 3x by optimizing curvature at a strain value of 0.5% biaxial strain is reported.
Journal ArticleDOI
A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs
TL;DR: In this paper, a strain engineering approach based on the patterning and under etching of fins using strained Si grown on SiGe strain relaxed buffers is proposed, which enhances the strain of the patterned Fins up to 2.9 GPa without the need of epitaxial source and drain stressors.
References
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
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Nonlinear silicon photonics
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.