Journal ArticleDOI
Modeling of Advanced RF Bulk FinFETs
Pragya Kushwaha,Harshit Agarwal,Yen-Kai Lin,Ming-Yen Kao,Juan Pablo Duarte,Huan-Lin Chang,W. Wong,J. Fan,Xiayu,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +11 more
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TLDR
In this article, the Berkeley short-channel IGFET model-common multi-gate model is improved to account for the impact of substrate coupling on the RF parameters, and the model demonstrates excellent agreement with the measured data over a broad range of frequencies.Abstract:
The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1] . The transistor’s characteristics are dominated by substrate parasitics at intermediate frequencies (0.1–10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.read more
Citations
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Journal ArticleDOI
A broadband small‐signal model extraction methodology over 0.2‐220 GHz for bulk FinFETs in RF CMOS technology
Proceedings ArticleDOI
Performance Investigation of Inverted T-shaped Heterojunction FinFET along with Oxide Stacking.
TL;DR: In this paper , the performance of the newly proposed inverted T-shaped heterojunction FinFET with the concept of oxide stacking (L-FinFET_OS) is discussed and compared with conventional inverted t-shaped H-FET.
References
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Journal Article
The design of CMOS radio-frequency integrated circuits, 2nd edition
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Book
Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design
Christian Enz,Eric A. Vittoz +1 more
TL;DR: In this article, the authors present a short history of the EKV most model and its application in IC design, and present an extended version of the model with an extended charge-based model.
Journal ArticleDOI
An MOS transistor model for RF IC design valid in all regions of operation
TL;DR: In this paper, a charge-based model of the intrinsic part of the MOS transistor is presented, which is based on the forward and reverse charges q/sub f/ defined as the mobile charge densities, evaluated at the source and at the drain.
Proceedings ArticleDOI
An effective gate resistance model for CMOS RF and noise modeling
TL;DR: In this paper, a physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices.
Journal ArticleDOI
An improved MOSFET model for circuit simulation
TL;DR: A new MOSFET model is presented that overcomes the errors present in state-of-the-art models and comparison with measured data is presented to validate the new model.