Journal ArticleDOI
Write Current Reduction in Transition Metal Oxide Based Resistance-Change Memory**
Seung-Eon Ahn,Myoung-Jae Lee,Youngsoo Park,Bo Soo Kang,Chang Bum Lee,Ki-Hwan Kim,Sunae Seo,Dongseok Suh,Dong-Chirl Kim,Ji-Hyun Hur,Wenxu Xianyu,G. Stefanovich,Huaxiang Yin,In-Kyeong Yoo,Jung-hyun Lee,Jong-Bong Park,In-Gyu Baek,Bae Ho Park +17 more
TLDR
This work has focused on defining just the storage node portion of the devices, which utilize the resis-tance change within the film to store information via two dif-ferent stable resistance states, and has attempted to de-termine the properties of such structures.Abstract:
while still retaining a selective switch (transistor or diode) asthe data storage element. Thus for high-density applications,crossbar structures are ideal, whereas for non-volatility, resis-tance-change materials showthe best promise. In orderto rea-lize the fabrication of universal memory elements, it is im-perative to develop a class of materials and structures thatcombine robust processibility, strong scalability, and rapidprogramming speed with non-volatility and low power con-sumption. In our work, we have focused on defining just thestorage node portion of the devices, which utilize the resis-tance change within the film to store information via two dif-ferent stable resistance states. Here, we have attempted to de-termine the properties of such structures and to study themechanisms behind resistance RAM (RRAM) storage. OurTi-doped (0.1 wt %) NiO samples deposited at room temper-ature show favorable node characteristics such as the lowestwrite current reported thus far for a unipolar switching resis-tance-change-based device (ca. 10 lA). In addition, the pro-gramming speed is comparable to the write time of SRAM(10 ns). By combining this node element with an appropriateselect switch, such as a high-performance diode, a thresholddevice, or a two-terminal non-ohmic device, it becomes possi-ble to fabricate high-density universal memory.Indeed, the fabrication of universal memory as the nextgeneration of non-volatile memory is the logical goal for re-search in this field. In comparison to Flash and dynamicRAM (DRAM), which are the current industry standards,next generation memories must combine the non-volatility ofFlash with the high-speed performance of SRAM.read more
Citations
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Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
TL;DR: The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable memory element for developing next generation nonvolatile memories and a model concerning redox reaction mediated formation and rupture of Ag bridges is suggested to explain the memory effect.
Journal ArticleDOI
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
TL;DR: In this paper, a physically-based explanation for universal resistance switching in bipolar resistive switching memory (RRAM) devices is provided, where a numerical model of filament growth based on thermally activated ion migration accounts for the resistance switching characteristics.
References
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Journal ArticleDOI
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
TL;DR: It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.
Journal ArticleDOI
Electronically Configurable Molecular-Based Logic Gates
C. P. Collier,Eric W. Wong,M. Belohradský,Françisco M. Raymo,J. F. Stoddart,Philip J. Kuekes,R. S. Williams,James R. Heath +7 more
TL;DR: Logic gates were fabricated from an array of configurable switches, each consisting of a monolayer of redox-active rotaxanes sandwiched between metal electrodes, which provided a significant enhancement over that expected for wired-logic gates.
Journal ArticleDOI
Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
Journal ArticleDOI
A 160-kilobit molecular electronic memory patterned at 10 11 bits per square centimetre
Jonathan Green,Jang Wook Choi,Akram Boukai,Yuri Bunimovich,Ezekiel Johnston-Halperin,Ezekiel Johnston-Halperin,Erica DeIonno,Yi Luo,Yi Luo,Bonnie A. Sheriff,Ke Xu,Young Shik Shin,Hsian-Rong Tseng,J. Fraser Stoddart,James R. Heath +14 more
TL;DR: A 160,000-bit molecular electronic memory circuit, fabricated at a density of 1011 bits cm-2 (pitch 33 nm; memory cell size 0.0011 μm2), that is, roughly analogous to the dimensions of a DRAM circuit projected to be available by 2020.
Journal ArticleDOI
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
S. Q. Liu,N. J. Wu,Alex Ignatiev +2 more
TL;DR: A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films.