Showing papers on "Diode published in 2013"
TL;DR: In this paper, a red quantum-dot light-emitting diodes with an external quantum efficiency of 18, close to the theoretical maximum of 20%, were reported, using a layer of zinc oxide nanocrystals providing highly effective electron transport.
Abstract: Red quantum-dot light-emitting diodes with an external quantum efficiency of 18%, close to the theoretical maximum of 20%, are reported. Using a layer of zinc oxide nanocrystals provides highly effective electron transport, resulting in devices with a low operating voltage and a high luminous power efficiency of 25 lm W−1.
1,009 citations
TL;DR: A brief and comprehensive summary on FF from a fundamental point of view is given, based on the three fundamental elements in the solar cell equivalent circuit, namely series resistance, shunt resistance and diode.
Abstract: The fill factor (FF) is an important parameter that determines the power conversion efficiency of an organic solar cell. There are several factors that can significantly influence FF, and these factors interact with each other very intricately. Due to this reason, a deep understanding of FF is quite difficult. Based on the three fundamental elements in the solar cell equivalent circuit, namely series resistance, shunt resistance and diode, we reviews the research progress in understanding on FF in organic solar cells. Physics lying behind the often-observed undesirable S-shaped J–V curves is also summarized. This paper aims to give a brief and comprehensive summary on FF from a fundamental point of view.
597 citations
TL;DR: The droop phenomenon in GaN light-emitting diodes originates from the excitation of Auger processes, which shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process.
Abstract: We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated $\mathrm{InGaN}/\mathrm{GaN}$ light-emitting diode under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the ``droop current''---the missing component of the injected current for light emission. We conclude that the droop phenomenon in GaN light-emitting diodes originates from the excitation of Auger processes.
592 citations
TL;DR: It is reported that a switchable EL behavior with white emission has not been observed thus far in single emitting layer structured nanomaterial LEDs, and this interesting current density-dependent emission is useful for the development of colorful LEDs.
Abstract: Carbon-dot based light-emitting diodes (LEDs) with driving current controlled color change are reported. These devices consist of a carbon-dot emissive layer sandwiched between an organic hole transport layer and an organic or inorganic electron transport layer fabricated by a solution-based process. By tuning the device structure and the injecting current density (by changing the applied voltage), we can obtain multicolor emission of blue, cyan, magenta, and white from the same carbon dots. Such a switchable EL behavior with white emission has not been observed thus far in single emitting layer structured nanomaterial LEDs. This interesting current density-dependent emission is useful for the development of colorful LEDs. The pure blue and white emissions are obtained by tuning the electron transport layer materials and the thickness of electrode.
454 citations
TL;DR: An overview of the progress in the molecular construction of four-coordinate organoboron compounds with an emphasis on their applications in OLEDs is provided.
Abstract: Four-coordinate organoboron compounds with rigid π-conjugated structures are intensely luminescent and have high carrier mobility which enables them to be applied in optoelectronics including organic light-emitting diodes (OLEDs), organic field-effect transistors, as well as photoresponsive, sensory and imaging materials. Various chelate ligands and boron moieties have been explored to construct proper electronic structures and suitable molecular arrangements, which play important roles on the photophysical and electronic properties of the four coordinate boron compounds. These efforts have produced a number of fascinating molecules, some of which have exhibited high performance as light emitting materials. In this article, we provide an overview of the progress in the molecular construction of four-coordinate organoboron compounds with an emphasis on their applications in OLEDs.
428 citations
TL;DR: In this article, an external quantum efficiency (η EQE ) roll-off model for organic light-emitting diodes (OLEDs) using thermally-activated delayed fluorescence (TADF) of 4,5-di (9H-carbazol-9-yl) phthalonitrile (2CzPN) was presented.
426 citations
TL;DR: It is demonstrated that a p-n heterojunction diode based on atomically thin MoS2 and sorted semiconducting carbon nanotubes yields unprecedented gate tunability in both its electrical and optical properties, which is not observed in the case of bulk semiconductor devices.
Abstract: The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.
389 citations
TL;DR: It is shown that embedding plasmonic structures into the semiconductor substantially increases hot electron emission, and Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm.
Abstract: When plasmonic nanostructures serve as the metallic counterpart of a metal–semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.
306 citations
TL;DR: This work proposes an all-optical optical diode which requires neither magnetic fields nor strong input fields, and is based on a "moving" photonic crystal generated in a three-level electromagnetically induced transparency medium.
Abstract: Optical diodes controlling the flow of light are of principal significance for optical information processing. They transmit light from an input to an output, but not in the reverse direction. This breaking of time reversal symmetry is conventionally achieved via Faraday or nonlinear effects. For applications in a quantum network, features such as the abilities of all-optical control, on-chip integration, and single-photon operation are important. Here we propose an all-optical optical diode which requires neither magnetic fields nor strong input fields. It is based on a "moving" photonic crystal generated in a three-level electromagnetically induced transparency medium in which the refractive index of a weak probe is modulated by the moving periodic intensity of a strong standing coupling field with two detuned counterpropagating components. Because of the Doppler effect, the frequency range of the crystal's band gap for the probe copropagating with the moving crystal is shifted from that for the counterpropagating probe. This mechanism is experimentally demonstrated in a room temperature Cs vapor cell.
296 citations
TL;DR: In this article, a polarization-insensitive tunable tunable metamaterial absorber with varactor diodes embedded between metammaterial units is presented. But the design, analysis and measurements of the tunability of the absorber are not discussed.
Abstract: We present the design, analysis and measurements of a polarization-insensitive tunable metamaterial absorber with varactor diodes embedded between metamaterial units. The basic unit shows excellent absorptivity in the designed frequency band over a wide range of incident angles. By regulating the reverse bias voltage on the varactor diode, the absorption frequency of the designed unit can be controlled continuously. The absorption mechanism is interpreted using the electromagnetic-wave interference theory. When the metamaterial units are placed along two orthogonal directions, the absorber is insensitive to the polarization of incident waves. The tunability of the absorber has been verified by experimental results with the measured bandwidth of 1.5?GHz (or relative bandwidth of 30%).
290 citations
TL;DR: All-solution processed polymer light-emitting diode displays are produced by solution-depositing the cathode and utilizing a multifunctional buffer layer between the cathodes and the organic layers, paving the way to industrial roll-to-roll manufacturing of flat panel displays.
Abstract: Adopting the emerging technology of printed electronics in manufacturing novel ultrathin flat panel displays attracts both academic and industrial interests because of the challenge in the device physics and the potential of reducing production costs. Here we produce all-solution processed polymer light-emitting diode displays by solution-depositing the cathode and utilizing a multifunctional buffer layer between the cathode and the organic layers. The use of ink-jetted conducting nanoparticles as the cathode yields high-resolution cathode patterns without any mechanical stress on the organic layers. The buffer layer, which offers the functions of solvent-proof electron injection and proper affinity, is fabricated by mixing the water/alcohol-soluble polymer and a curable epoxy adhesive. Our 1.5-inch polymer light-emitting diode displays are fabricated without any dead pixels or dead lines. The all-solution process eliminates the need for high vacuum for thermal evaporation of the cathode, which paves the way to industrial roll-to-roll manufacturing of flat panel displays.
TL;DR: In this paper, Schottky barrier diodes and metal-semiconductor field effect transistors (MESFETs) were demonstrated for the first time on β-Ga2O3 homoepitaxial layers.
TL;DR: In this paper, the authors review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as their own work on fully transparent bipolar heterostructure diodes (p-CuI/n-ZnO).
Abstract: Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p-CuI/n-ZnO) with high rectification of several 107 and ideality factors down to 1.5.
γ-CuI(111) thin film on glass (1 × 1 cm2) and IV-characteristics of p-CuI/n-ZnO/a-Al2O3 bipolar heterojunction diode.
TL;DR: A method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors and formed a bias-independent p- n junction, which could perform a crucial role in the development of optoelectronic valleytronic devices.
Abstract: Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.
TL;DR: In this article, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed, and the measured devices demonstrate breakdown voltages of 2600 V with a differential specific on-resistance of 2 mΩ cm2.
Abstract: In this paper, vertical p-n diodes fabricated on pseudobulk gallium nitride (GaN) substrates are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a differential specific on-resistance of 2 mΩ cm2. This performance places these structures beyond the SiC theoretical limit on the power device figure of merit chart. Contrary to common belief, GaN devices do possess avalanche capability. The temperature coefficient of the breakdown voltage is positive, showing that the breakdown is indeed because of impact ionization and avalanche. This is an important property of the device for operation in inductive switching environments. Critical electric field and mobility parameters for epitaxial GaN layers grown on bulk GaN are extracted from electrical measurements. The reverse recovery time of the vertical GaN p-n diode is not discernible because it is limited by capacitance rather than minority carrier storage, and because of this its switching performance exceeds the highest speed silicon diode.
TL;DR: In this article, a method for making stable MoS2 rectifying diodes using selected-area plasma treatment is presented, which can play an important role in the development of nanoelectronic devices.
Abstract: We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (∼104 for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials.
TL;DR: In this article, a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials is presented. But it is not suitable for use in contactless thermal circuits or in the conception of radiative coatings for thermal management.
Abstract: A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of future contactless thermal circuits or in the conception of radiative coatings for thermal management.
TL;DR: In this article, an optical switch operating at a wavelength of 1.55 µm and showing a 12 dB modulation depth is introduced, implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical properties upon transitions between crystalline and amorphous structural phases.
Abstract: An optical switch operating at a wavelength of 1.55 μm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical properties upon transitions between its crystalline and amorphous structural phases. These transitions are triggered using a pulsed laser diode at λ = 975 nm and used to tune the resonant frequency of the resonator and the resultant modulation depth of the 1.55 μm transmitted light.
TL;DR: A broad overview of the state of the art of the field of organic semiconductor single-crystal materials, devices, and theory can be found in this article, where the intrinsic structure-property relationship is examined, thus providing a test bed for charge and energy transport theories.
Abstract: Organic optoelectronics is an emerging field that exploits the unique properties of conjugated organic materials to develop new applications that require a combination of performance, low cost, light weight, and processability. For instance, disposable or wearable electronics, light-emitting diodes, smart tags, sensors, and solar cells all fall into this active area of research. Single crystals of conjugated organic molecules are, undoubtedly, the materials with the highest degree of order and purity among the variety of different forms of organic semiconductors. Electronic devices comprising these materials, such as single-crystal transistors and photoconductors developed during the last decade, are by far the best performers in terms of the fundamental parameters such as charge-carrier mobility, exciton diffusivity, concentration of defects, and operational stability. Extremely low density of defects and the resultant remarkable electrical characteristics of some of the organic single-crystal devices allow experimental access to the intrinsic charge transport properties not dominated by charge scattering and trapping. This enables basic studies of the physics of organic semiconductors, including examining the intrinsic structure-property relationship, thus providing a test bed for charge and energy transport theories. The goal of this issue of MRS Bulletin is to provide a broad overview of the state of the art of the field of organic semiconductor single-crystal materials, devices, and theory.
TL;DR: Schottky-barrier diodes fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications and suggest that an affordable and portable fully-integrated CMOS THz imager is possible.
Abstract: Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications Using a compact passive-pixel array architecture, a fully-integrated 280-GHz 4 × 4 imager is demonstrated At 1-MHz input modulation frequency, the measured peak responsivity is 51 kV/W with ±20% variation among the pixels The measured minimum NEP is 29 pW/Hz1/2 Additionally, an 860-GHz SBD detector is implemented by reducing the number of unit cells in the diode, and by exploiting the efficiency improvement of patch antenna with frequency The measured NEP is 42 pW/Hz1/2 at 1-MHz modulation frequency This is competitive to the best reported performance of MOSFET-based pixel measured without attaching an external silicon lens (66 pW/Hz1/2 at 1 THz and 40 pW/Hz1/2 at 650 GHz) Given that incorporating the 280-GHz detector into an array increased the NEP by ~ 20%, the 860-GHz imager array should also have the similar NEP as that for an individual detector The circuits were utilized in a setup that requires neither mirrors nor lenses to form THz images These suggest that an affordable and portable fully-integrated CMOS THz imager is possible
TL;DR: The results demonstrate that the high-bias properties of "gateway" states can be used to provide additional functionality to molecular electronic systems and are the first experimental demonstration of a rationally tunable system of single-molecule rectifiers.
Abstract: We demonstrate a new method of achieving rectification in single molecule devices using the high-bias properties of gold–carbon bonds. Our design for molecular rectifiers uses a symmetric, conjugated molecular backbone with a single methylsulfide group linking one end to a gold electrode and a covalent gold–carbon bond at the other end. The gold–carbon bond results in a hybrid gold-molecule “gateway” state pinned close to the Fermi level of one electrode. Through nonequilibrium transport calculations, we show that the energy of this state shifts drastically with applied bias, resulting in rectification at surprisingly low voltages. We use this concept to design and synthesize a family of diodes and demonstrate through single-molecule current–voltage measurements that the rectification ratio can be predictably and efficiently tuned. This result constitutes the first experimental demonstration of a rationally tunable system of single-molecule rectifiers. More generally, the results demonstrate that the high...
TL;DR: In this article, the authors achieved over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation with die thinning and encapsulation.
Abstract: In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.
TL;DR: In this paper, the light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations.
Abstract: Light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and vertical LED structures, LEE is obtained to be <10% due to strong DUV light absorption in the p-GaN layer. In flip-chip LEDs, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of DUV LEDs with decreasing wavelength. It is also found that vertical LED structures can have advantages over flip-chip structures for increasing LEE in the TM mode.
TL;DR: In this paper, high-efficiency InGaN light-emitting diodes (LEDs) in the "green gap" range were fabricated on c-face sapphire (0001) substrates.
Abstract: High-efficiency InGaN light-emitting diodes (LEDs) in the "green gap" range were fabricated on c-face sapphire (0001) substrates. Optical properties were enhanced by band engineering of active layers and optimization of growth conditions. Output power and external quantum efficiency of 11.0 mW and 24.7% for a 559 nm green-yellow LED and 4.7 mW and 13.3% for a 576 nm yellow LED with the injection current of 20 mA were achieved, respectively.
TL;DR: In this article, the authors studied the origin of efficiency roll-off in colloidal quantum-dot light-emitting diodes through the comparison of QD electroluminescence and photoluminecence.
Abstract: We study the origin of efficiency roll-off (also called ``efficiency droop'') in colloidal quantum-dot light-emitting diodes through the comparison of quantum-dot (QD) electroluminescence and photoluminescence. We find that an electric-field-induced decrease in QD luminescence efficiency---and not charge leakage or QD charging (Auger recombination)---is responsible for the roll-off behavior, and use the quantum confined Stark effect to accurately predict the external quantum efficiency roll-off of QD light-emitting diodes.
TL;DR: In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is designed and developed for electric vehicle and hybrid electric vehicle applications, where each switching element is composed of four paralleled SiC junction gate field effect transistors (JFETs) with two antiparallel SiC Schottky barrier diodes.
Abstract: In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is designed and developed. With 1200-V, 100-A module rating, each switching element is composed of four paralleled SiC junction gate field-effect transistors (JFETs) with two antiparallel SiC Schottky barrier diodes. The stability of the module assembly processes is confirmed with 1000 cycles of -40°C to +200°C thermal shock tests with 1.3°C/s temperature change. The static characteristics of the module are evaluated and the results show 55 mΩ on-state resistance of the phase leg at 200°C junction temperature. For switching performances, the experiments demonstrate that while utilizing a 650-V voltage and 60-A current, the module switching loss decreases as the junction temperature increases up to 150°C. The test setup over a large temperature range is also described. Meanwhile, the shoot-through influenced by the SiC JFET internal capacitance as well as package parasitic inductances are discussed. Additionally, a liquid cooled three-phase inverter with 22.9 cm × 22.4 cm × 7.1 cm volume and 3.53-kg weight, based on this power module, is designed and developed for electric vehicle and hybrid electric vehicle applications. A conversion efficiency of 98.5% is achieved at 10 kHz switching frequency at 5 kW output power. The inverter is evaluated with coolant temperature up to 95°C successfully.
TL;DR: In this paper, the authors embed diodes as active circuit elements within a metamaterial to implement a switchable reflector/absorber at microwave frequencies, which can be tuned on and off to switch the function between a perfect absorber and a reflector.
Abstract: We embed diodes as active circuit elements within a metamaterial to implement a switchable metamaterial reflector/absorber at microwave frequencies. Diodes are placed in series with the unit cells of the metamaterial array. This results in just a pair of control lines to actively tune all the diodes in a metamaterial. Diodes can be tuned on and off to switch the function of the metamaterial between a perfect absorber and a reflector. The design, simulation, and experimental results of a switchable reflector/absorber in 2–6 GHz range are presented.
17 Oct 2013
TL;DR: A simple Vce online monitoring circuit that allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation and bipolar measurement allows monitoring of both IGBT and antiparallel diode.
Abstract: A simple Vce online monitoring circuit is presented in this paper. It allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation. Bipolar measurement allows monitoring of both IGBT and antiparallel diode. The circuit uses two serial connected diodes to sense the Vce voltage with millivolt accuracy. One diode acts as a protection to block high DC voltage present on input terminals. When the device is conducting the voltage on the second diode is measured to compensate for the voltage drop on the protection diode thus eliminating voltage offset due to diodes' forward voltage temperature dependency. Using four diodes one can monitor voltages on all power devices in a converter leg.
TL;DR: Transparent and electrically conducting p-type copper(I)-iodide thin-films form highly rectifying p-CuI/n-ZnO diodes as discussed by the authors.
Abstract: Transparent and electrically conducting p-type copper(I)-iodide thin-films form highly rectifying p-CuI/n-ZnO diodes Sputtered copper thin films on glass were transformed into polycrystalline γ-CuI by exposing them to iodine vapor The electrical parameters extracted from Hall effect are p=5×1018 cm−3, μh,Hall=6 cm2/Vs, and ρ=02 Ωcm for hole concentration, mobility, and electrical resistivity, respectively Heterostructures consisting of p-CuI and pulsed-laser deposited n-ZnO were fabricated on a-plane sapphire substrates The p-CuI/n-ZnO diode exhibits a current rectification ratio of 6×106 at ±2 V and an ideality factor of η=214
TL;DR: In this paper, high-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS compatible technology with only one extra lithographic step.
Abstract: High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate together with the AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors and with only one extra lithographic step. The diode anode and the transistor gate are processed together and the same metallization is used for both, avoiding extra metal deposition dedicated to the Schottky junction. A gated edge termination allows obtaining low reverse leakage current (within 1 μA/mm at -600 V), which is several orders of magnitude lower than the one of conventional Schottky diodes processed on the same wafer. Recess is implemented at the anode, resulting in low diode turn-on voltage values.