Showing papers on "Quantum well published in 2018"
TL;DR: A general scaling law is proposed to determine the binding energy of excitons in perovskite quantum wells of any layer thickness to solve the fundamental questions concerning the nature of optical resonances and their scaling with quantum well thickness.
Abstract: Ruddlesden–Popper halide perovskites are 2D solution-processed quantum wells with a general formula A2A’n-1M
n
X3n+1, where optoelectronic properties can be tuned by varying the perovskite layer thickness (n-value), and have recently emerged as efficient semiconductors with technologically relevant stability. However, fundamental questions concerning the nature of optical resonances (excitons or free carriers) and the exciton reduced mass, and their scaling with quantum well thickness, which are critical for designing efficient optoelectronic devices, remain unresolved. Here, using optical spectroscopy and 60-Tesla magneto-absorption supported by modeling, we unambiguously demonstrate that the optical resonances arise from tightly bound excitons with both exciton reduced masses and binding energies decreasing, respectively, from 0.221 m0 to 0.186 m0 and from 470 meV to 125 meV with increasing thickness from n equals 1 to 5. Based on this study we propose a general scaling law to determine the binding energy of excitons in perovskite quantum wells of any layer thickness. Hybrid 2D layered perovskites are solution-processed quantum wells whose optoelectronic properties are tunable by varying the thickness of the inorganic slab. Here Blancon et al. work out a general behavior for dependence of the excitonic properties in layered 2D perovskites.
494 citations
TL;DR: It is shown that moving to the ligand allylammonium enables a narrower distribution of QW widths, creating a flattened energy landscape that leads to reduced ultrafast shallow hole trapping that originates from the most strongly confined QWs.
Abstract: Metal halide perovskites have achieved photovoltaic efficiencies exceeding 22%, but their widespread use is hindered by their instability in the presence of water and oxygen To bolster stability, researchers have developed low-dimensional perovskites wherein bulky organic ligands terminate the perovskite lattice, forming quantum wells (QWs) that are protected by the organic layers In thin films, the width of these QWs exhibits a distribution that results in a spread of bandgaps in the material arising due to varying degrees of quantum confinement across the population Means to achieve refined control over this QW width distribution, and to examine and understand its influence on photovoltaic performance, are therefore of intense interest Here we show that moving to the ligand allylammonium enables a narrower distribution of QW widths, creating a flattened energy landscape that leads to ×14 and ×19 longer diffusion lengths for electrons and holes, respectively We attribute this to reduced ultrafast
265 citations
TL;DR: A fast synthetic method is reported for synthesizing inch-scale quasi-2D PSCMs, namely (C4H9NH3) n-1Pb nI3 n+1 (index n = 1, 2, 3, 4, and ∞), and their application in a single-crystal photodetector is demonstrated.
Abstract: The robust material stability of the quasi-two-dimensional (quasi-2D) metal halide perovskites has opened the possibility for their usage instead of three-dimensional (3D) perovskites. Further, devices based on large area single crystal membranes have shown increasing promise for photoelectronic applications. However, growing inch-scale quasi-2D perovskite single crystal membranes (quasi-2D PSCMs) has been fundamentally challenging. Here we report a fast synthetic method for synthesizing inch-scale quasi-2D PSCMs, namely (C4H9NH3)n(CH3NH3)n−1PbnI3n+1 (index n = 1, 2, 3, 4, and ∞), and demonstrate their application in a single-crystal photodetector. A quasi-2D PSCM has been grown at the water–air interface where spontaneous alignment of alkylammonium cations and high chemical potentials enable uniform orientation and fast in-plane growth. Structural, optical, and electrical characterizations have been conducted as a function of quantum well thickness, which is determined by the index n. It is shown that th...
216 citations
TL;DR: It is demonstrated that ultrafast energy transfer along cascade quantum well structures in 2D RPPs concentrates photogenerated carriers on the lowest-bandgap QW state, at which population inversion can be readily established enabling room-temperature amplified spontaneous emission and lasing.
Abstract: 3D organic-inorganic hybrid perovskites have featured high gain coefficients through the electron-hole plasma stimulated emission mechanism, while their 2D counterparts of Ruddlesden-Popper perovskites (RPPs) exhibit strongly bound electron-hole pairs (excitons) at room temperature. High-performance solar cells and light-emitting diodes (LEDs) are reported based on 2D RPPs, whereas light-amplification devices remain largely unexplored. Here, it is demonstrated that ultrafast energy transfer along cascade quantum well (QW) structures in 2D RPPs concentrates photogenerated carriers on the lowest-bandgap QW state, at which population inversion can be readily established enabling room-temperature amplified spontaneous emission and lasing. Gain coefficients measured for 2D RPP thin-films (≈100 nm in thickness) are found about at least four times larger than those for their 3D counterparts. High-density large-area microring arrays of 2D RPPs are fabricated as whispering-gallery-mode lasers, which exhibit high quality factor (Q ≈ 2600), identical optical modes, and similarly low lasing thresholds, allowing them to be ignited simultaneously as a laser array. The findings reveal that 2D RPPs are excellent solution-processed gain materials potentially for achieving electrically driven lasers and ideally for on-chip integration of nanophotonics.
177 citations
27 Mar 2018
TL;DR: In this paper, quantum dot active layers for lasers and amplifiers on and off Si have been demonstrated, and results for quantum dot based photodetectors and modulators look promising.
Abstract: Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with ...
176 citations
TL;DR: In this article, the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors' group, is reviewed.
Abstract: This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group. The background to the development of the current device structure on sapphire is described and the reason for using a (0001) sapphire with a miscut angle of 1.0° relative to the m-axis is clarified. Our LEDs incorporate uneven quantum wells (QWs) grown on an AlN template with dense macrosteps. Due to the low threading dislocation density of AlGaN and AlN templates of about 5 × 108/cm2, the number of nonradiative recombination centers is decreased. In addition, the uneven QW show high external quantum efficiency (EQE) and wall-plug efficiency, which are considered to be boosted by the increased internal quantum efficiency (IQE) by enhancing carrier localization adjacent to macrosteps. The achieved LED performance is considered to be sufficient for practical applications. The advantage of the uneven QW is discussed in terms of the EQE and IQE. A DUV-LED die with an output of over 100 mW at 280–300 nm is considered feasible by applying techniques including the encapsulation. In addition, the fundamental achievements of various groups are reviewed for the future improvements of AlGaN-based DUV-LEDs. Finally, the applications of DUV-LEDs are described from an industrial viewpoint. The demonstrations of W/cm2-class irradiation modules are shown for UV curing.
153 citations
TL;DR: It is demonstrated that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions.
Abstract: Two-dimensional (2D) gallium nitride (GaN) has been highly anticipated because its quantum confinement effect enables desirable deep-ultraviolet emission, excitonic effect and electronic transport properties. However, the currently obtained 2D GaN can only exist as intercalated layers of atomically thin quantum wells or nanometer-scale islands, limiting further exploration of its intrinsic characteristics. Here, we report, for the first time, the growth of micrometer-sized 2D GaN single crystals on liquid metals via a surface-confined nitridation reaction and demonstrate that the 2D GaN shows uniformly incremental lattice, unique phonon modes, blue-shifted photoluminescence emission and improved internal quantum efficiency, providing direct evidence to the previous theoretical predictions. The as-grown 2D GaN exhibits an electronic mobility of 160 cm2·V–1·s–1. These findings pave the way to potential optoelectronic applications of 2D GaN single crystals.
148 citations
TL;DR: In this paper, a modulation-doped double heterostructure field effect transistors were demonstrated for high power and high frequency device applications, where electrons can be transferred from below and above the β-Ga2O3 quantum well.
Abstract: In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm−2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V·s at 40 K and 123 cm2/V·s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of −7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of 1.55 μm showed a breakdown voltage of 428 V, corresponding to an average breakdown field of 2.8 MV/cm. The breakdown measurement on the device with a scaled gate-drain spacing of 196 nm indicated an average breakdown field of 3.2 MV/cm. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistor could act as a promising candidate for high power and high frequency device applications.
123 citations
TL;DR: In this paper, an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation, is presented.
Abstract: We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high-energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcogenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments.
120 citations
TL;DR: In this paper, the properties of the quasi-type-II structure in a single quantum well nanowire have been investigated and the authors showed that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in the nanowires.
Abstract: The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasi-type-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future nanoscale quantum well devices.
115 citations
TL;DR: In this paper, the authors integrate gate-defined quantum dots and superconductivity into germanium heterostructures and demonstrate electric gate-control of the supercurrent in a quantum well.
Abstract: Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into germanium heterostructures. In our system, heavy holes with mobilities exceeding 500,000 cm2 (Vs)−1 are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We observe proximity-induced superconductivity in the quantum well and demonstrate electric gate-control of the supercurrent. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material for quantum information processing.
TL;DR: In this article, quasi-2D CsPbBr3 quantum wells homogeneously surrounded by inorganic crystalline Cs4pbBr6 of large bandgap are grown.
Abstract: Metal halide perovskites are rising as a competitive material for next-generation light-emitting diodes (LEDs). However, the development of perovskite LEDs is impeded by their fast carriers diffusion and poor stability in bias condition. Herein, quasi-2D CsPbBr3 quantum wells homogeneously surrounded by inorganic crystalline Cs4PbBr6 of large bandgap are grown. The centralization of carriers in nanoregion facilitates radiative recombination and brings much enhanced luminescence quantum yield. The external quantum efficiency and luminescence intensity of the LEDs based on this nanocomposite are one order of magnitude higher than the conventional low-dimensional perovskite. Meanwhile, the use of inorganic nanocomposite materials brings much improved device operation lifetime under constant electrical field.
TL;DR: To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1−xN buffer layers between GaN and Si substrate.
Abstract: Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.1–3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1−xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm2.
TL;DR: It is shown that the relaxation of the interface strain is triggered by perovskite layers above a critical thickness, which leads to the release of the mechanical energy arising from the lattice mismatch, which nucleates the surface reorganization and may potentially induce the formation of previously observed lower energy edge states.
Abstract: Surface states are ubiquitous to semiconductors and significantly impact the physical properties and, consequently, the performance of optoelectronic devices. Moreover, surface effects are strongly amplified in lower dimensional systems such as quantum wells and nanostructures. Layered halide perovskites (LHPs) are two-dimensional solution-processed natural quantum wells where optoelectronic properties can be tuned by varying the perovskite layer thickness n, i.e., the number of octahedra spanning the layer. They are efficient semiconductors with technologically relevant stability. Here, a generic elastic model and electronic structure modeling are applied to LHPs heterostructures with various layer thickness. We show that the relaxation of the interface strain is triggered by perovskite layers above a critical thickness. This leads to the release of the mechanical energy arising from the lattice mismatch, which nucleates the surface reorganization and may potentially induce the formation of previously ob...
TL;DR: In this article, the authors investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect and show that the design with multi quantum well reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures.
Abstract: GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect. Three complex heterostructures were grown on top of 200 nm thick strain-relaxed Ge0.9Sn0.1 buffers. The lasing is investigated in terms of threshold and maximal lasing operation temperature by comparing multiple quantum well to double heterostructure samples. Pumping under two different wavelengths of 1064 and 1550 nm yields comparable lasing thresholds. The design with multi quantum wells reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures. Moreover, 20 K higher maximal lasing temperatures were found for lower energy pumping of 1550 nm.
TL;DR: The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells as mentioned in this paper, and the measured 2D hole gas densities, about $4 \times 10−13$ cm$^{-2}, remain unchanged down to cryogenic temperatures.
Abstract: The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped gallium nitride quantum wells. Experimental results provide unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction. The measured 2D hole gas densities, about $4 \times 10^{13}$ cm$^{-2}$, are among the highest among all known semiconductors and remain unchanged down to cryogenic temperatures. Some of the lowest sheet resistances of all wide-bandgap semiconductors are seen. The observed results provide a new probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces, and simultaneously enable the missing component for gallium nitride-based p-channel transistors for energy-efficient electronics.
TL;DR: In this paper, the concept of intersubband transitions in van der Waals quantum wells is introduced and the first experimental observation is reported, where near-field local probing is employed to spectrally resolve inter-band transitions with a nanometre-scale spatial resolution and electrostatically control the absorption.
Abstract: The science and applications of electronics and optoelectronics have been driven for decades by progress in the growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional materials and hold unexplored potential to overcome the aforementioned limitations—they form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching restrictions. We employ near-field local probing to spectrally resolve intersubband transitions with a nanometre-scale spatial resolution and electrostatically control the absorption. This work enables the exploitation of intersubband transitions with unmatched design freedom and individual electronic and optical control suitable for photodetectors, light-emitting diodes and lasers. Experimental observation of intersubband transitions in van der Waals quantum wells is enabled by high spatial resolution imaging through near-field optical microscopy.
TL;DR: A biomimetic approach is presented to construct an artificial ligh-harvesting system in mixed multiple quantum wells of 2D-RPPs of (BA)2 (FA)n-1 Pbn Br3n+1 , achieving room-temperature ASE and nanowire (NW) lasing.
Abstract: Miniaturized nanowire nanolasers of 3D perovskites feature a high gain coefficient; however, room-temperature optical gain and nanowire lasers from 2D layered perovskites have not been reported to date. A biomimetic approach is presented to construct an artificial ligh-harvesting system in mixed multiple quantum wells (QWs) of 2D-RPPs of (BA)2 (FA)n-1 Pbn Br3n+1 , achieving room-temperature ASE and nanowire (NW) lasing. Owing to the improvement of flexible and deformable characteristics provided by organic BA cation layers, high-density large-area NW laser arrays were fabricated with high photostability. Well-controlled dimensions and uniform geometries enabled 2D-RPPs NWs functioning as high-quality Fabry-Perot (FP) lasers with almost identical optical modes, high quality (Q) factor (ca. 1800), and similarly low lasing thresholds.
TL;DR: In this paper, electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well were reported. And they attributed all transport properties to the presence of hydrodynamic effects.
Abstract: We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predicted significance of viscous flow in mesoscopic devices.
TL;DR: Spectroscopic measurements and model calculations suggest that both systems funnel electronic excitations from the back to the front of the film through energy transfer mechanisms on the time scales of 100's of ps
Abstract: Two-dimensional (2D) perovskite quantum wells are generating broad scientific interest because of their potential for use in optoelectronic devices. Recently, it has been shown that layers of 2D perovskites can be grown in which the average thicknesses of the quantum wells increase from the back to the front of the film. This geometry carries implications for light harvesting applications because the bandgap of a quantum well decreases as its thickness increases. The general structural formula for the 2D perovskite systems under investigation in this work is (PEA)2(MA)n-1[PbnI3n+1] (PEA = phenethyl ammonium, MA = methyl ammonium). Here, we examine two layered 2D perovskites with different distributions of quantum well thicknesses. Spectroscopic measurements and model calculations suggest that both systems funnel electronic excitations from the back to the front of the film through energy transfer mechanisms on the time scales of 100's of ps (i.e., energy transfer from thinner to thicker quantum wells). In addition, the model calculations demonstrate that the transient absorption spectra are composed of a progression of single exciton and biexciton resonances associated with the individual quantum wells. We find that exciton dissociation and/or charge transport dynamics make only minor contributions to the transient absorption spectra within the first 1 ns after photo-excitation. An analysis of the energy transfer kinetics indicates that the transitions occur primarily between quantum wells with values of n that differ by 1 because of the spectral overlap factor that governs the energy transfer rate. Two-dimensional transient absorption spectra reveal a pattern of resonances consistent with the dominance of sequential energy transfer dynamics.
TL;DR: High-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy are demonstrated and their electro-optical properties are characterized.
Abstract: In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of $$\pm $$
15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.
TL;DR: In this article, electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well were reported. And they attributed all transport properties to the presence of hydrodynamic effects.
Abstract: We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predicted significance of viscous flow in mesoscopic devices.
TL;DR: In this paper, a high-speed nonpolar InGaN/GaN micro-scale light-emitting diode (LED) with a record electrical −3 dB modulation bandwidth of 1.5 GHz at a current density of 1 kA/cm2 was presented.
Abstract: We demonstrate a high-speed nonpolar ${m}$ -plane InGaN/GaN micro-scale light-emitting diode (LED) with a record electrical −3 dB modulation bandwidth of 1.5 GHz at a current density of 1 kA/cm2. A differential carrier lifetime (DLT) of 200 ps at 1 kA/cm2 was extracted using a rate-equation model. The short DLT is attributed to the high electron–hole wave function overlap in polarization-free nonpolar InGaN/GaN quantum wells, which leads to a higher spontaneous emission rate at low current densities compared to polar $c$ -plane quantum wells. LEDs with improved high-speed performance at low current densities will help to reduce power dissipation and increase efficiency in Gb/s visible-light communication systems.
TL;DR: In this paper, the authors investigated the influence of optical feedback in InAs/GaAs quantum dot laser epitaxially grown on silicon and revealed that the onset of the critical feedback level strongly depends on the excited-to-ground-state ratio.
Abstract: This work reports on a systematic investigation of the influence of optical feedback in InAs/GaAs quantum dot lasers epitaxially grown on silicon. The boundaries associated to the onset of the critical feedback level corresponding to the first Hopf bifurcation are extracted at different bias conditions with respect to the onset of the first excited state transition. Overall, results show that quantum dot lasers directly grown onto silicon are much more resistant to optical feedback than quantum well lasers, mostly resulting from a small linewidth enhancement factor of high-quality quantum dot material. However, results also unveil that the onset of the critical feedback level strongly depends on the excited-to-ground-state ratio, hence a figure of merit showing that a small ratio of the excited-to-ground-state lasing thresholds is not beneficial for maintaining a high degree of stability. This work brings further insights in the understanding of quantum dot laser physics and is useful for designing feedback resistant lasers for isolator-free transmission in metro, access, and data center optical networks, as well as for integrated photonics.
TL;DR: The authors present temperature dependent studies of GaN nanobeam lasers grown on a silicon substrate and demonstrate high-β lasing at room temperature and show a lasing transition in the absence of a threshold nonlinearity at 156 K.
Abstract: Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale photonic integration requiring energy-efficient coherent light sources with a small footprint. Recent studies in this field have triggered a vivid debate on how to prove and interpret lasing in the high-β regime. We investigate close-to-ideal spontaneous emission coupling in GaN nanobeam lasers grown on silicon. Such nanobeam cavities allow for efficient funneling of spontaneous emission from the quantum well gain material into the laser mode. By performing a comprehensive optical and quantum-optical characterization, supported by microscopic modeling of the nanolasers, we identify high-β lasing at room temperature and show a lasing transition in the absence of a threshold nonlinearity at 156 K. This peculiar characteristic is explained in terms of a temperature and excitation power-dependent interplay between zero-dimensional and two-dimensional gain contributions.
TL;DR: While the sharp emission lines of microlasers are advantageous for cell tagging, their relatively large size can impede cell migration and behavior, Fikouras et al. develop nano-sized lasers that can readily tag and track various types of cells, including through narrow constrictions.
Abstract: Molecular dyes, plasmonic nanoparticles and colloidal quantum dots are widely used in biomedical optics. Their operation is usually governed by spontaneous processes, which results in broad spectral features and limited signal-to-noise ratio, thus restricting opportunities for spectral multiplexing and sensing. Lasers provide the ultimate spectral definition and background suppression, and their integration with cells has recently been demonstrated. However, laser size and threshold remain problematic. Here, we report on the design, high-throughput fabrication and intracellular integration of semiconductor nanodisk lasers. By exploiting the large optical gain and high refractive index of GaInP/AlGaInP quantum wells, we obtain lasers with volumes 1000-fold smaller than the eukaryotic nucleus (Vlaser < 0.1 µm3), lasing thresholds 500-fold below the pulse energies typically used in two-photon microscopy (Eth ≈ 0.13 pJ), and excellent spectral stability (<50 pm wavelength shift). Multiplexed labeling with these lasers allows cell-tracking through micro-pores, thus providing a powerful tool to study cell migration and cancer invasion. While the sharp emission lines of microlasers are advantageous for cell tagging, their relatively large size can impede cell migration and behavior. Here, Fikouras et al. develop nano-sized lasers that can readily tag and track various types of cells, including through narrow constrictions.
TL;DR: In this article, a theoretical paradigm for high temperature quantum spin Hall effect in monolayer-substrate heterostructures was proposed, where the spin-orbit coupling was exploited to yield high temperature spin-hall effect with bulk gaps of several hundreds of meV.
Abstract: The quantum spin Hall effect (QSHE) has formed the seed for contemporary research on topological quantum states of matter. Since its discovery in HgTe/CdTe quantum wells and InAs/GaSb heterostructures, all such systems have so far been suffering from extremely low operating temperatures, rendering any technological application out of reach. We formulate a theoretical paradigm to accomplish the high temperature QSHE in monolayer-substrate heterostructures. Specifically, we explicate our proposal for hexagonal compounds formed by monolayers of heavy group-V elements (As, Sb, Bi) on a SiC substrate. We show how orbital filtering due to substrate hybridization, a tailored multiorbital density of states at low energies, and large spin-orbit coupling can conspire to yield QSH states with bulk gaps of several hundreds of meV. Combined with the successful realization of Bi/SiC (0001), with a measured bulk gap of similar to 800 meV reported previously [F. Reis et al., Science 357, 287 (2017)], our paradigm elevates the QSHE from an intricate quantum phenomenon at low temperatures to a scalable effect amenable to device design and engineering.
TL;DR: In this article, the authors showed that the use of AlN-delta-GaN QW with ∼1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarised emission.
Abstract: Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ∼1–3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230–250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstra...
TL;DR: In this article, a preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported, where the modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser.
Abstract: A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absorption of the modulator can be adjusted due to the changed band bending of the InGaN quantum well active region, and hence the threshold current and the light output power of the laser can be tuned. The photodetector can effectively detect the output power of the laser tuned by the applied voltage to the modulator, which opens up a new way for GaN-based on-chip photonic integration on Si.
TL;DR: In this paper, it was shown that the often observed efficiency droop in AlGaN quantum well heterostructures is an internal carrier loss process, analogous to the InGaN system.
Abstract: We show that the often observed efficiency droop in AlGaN quantum well heterostructures is an internal carrier loss process, analogous to the InGaN system. We attribute this loss process to Auger recombination, with C = 2.3 × 10−30 cm6 s−1; a similar value found commonly in InGaN-based devices. As a result, the peak internal quantum efficiency (IQE) of our structures is limited to 66%. These values were obtained by resonant excitation (time-resolved) photoluminescence (PL), avoiding common error sources in IQE measurements. The existence of strong Auger recombination implies that simple methods employed for IQE determination, such as temperature-dependent PL, may lead to erroneous values. Auger losses will have to be considered once the challenges regarding carrier injection are solved.