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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

Papers
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High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, +2 more
- 01 May 2001 - 
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
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Carbon-based Supercapacitors Produced by Activation of Graphene

Yanwu Zhu, +12 more
- 24 Jun 2011 - 
TL;DR: This work synthesized a porous carbon with a Brunauer-Emmett-Teller surface area, a high electrical conductivity, and a low oxygen and hydrogen content that has high values of gravimetric capacitance and energy density with organic and ionic liquid electrolytes.
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Hafnium and zirconium silicates for advanced gate dielectrics

Glen D. Wilk, +2 more
- 01 Jan 2000 - 
TL;DR: In this article, a gate dielectric film with metal contents ranging from ∼3 to 30 at. % Hf and Zr has been investigated, and the results show that Hf exhibits excellent electrical properties and high thermal stability in direct contact with Si, while Al electrodes produce very good electrical properties, but also react with the silicates.
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The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

Adam Pirkle, +9 more
- 23 Sep 2011 - 
TL;DR: In this article, the effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu substrate to an insulating (SiO2) substrate on the physical and electrical properties of the transferred graphene are studied X-ray photoelectron spectroscopy and atomic force microscopy.
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The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy

Muge Acik, +7 more
- 16 Sep 2011 - 
TL;DR: In this article, the role of trapped water and the evolution of oxygen during annealing of reduced graphene oxide (GO) is investigated, and the interactions between randomly arranged nearby oxygen species are found to affect the spectral response (red and blue shifts) and the overall chemistry during the reduction process.