Applied Science Private University

About: Applied Science Private University is a education organization based out in Amman, Jordan. It is known for research contribution in the topics: Catalysis & Population. The organization has 4124 authors who have published 5299 publications receiving 116167 citations.

Laser-induced substructures in above-threshold-ionization spectra from intense few-cycle laser pulses

Abstract: We have calculated above-threshold-ionization (ATI) spectra for argon in a strong, few-cycle 400 nm laser pulse with an ab initio solution of the time-dependent Schr\"odinger equation and by using a model based on the strong field approximation. We find additional peaks in the resulting ATI spectra which are not present for longer pulses. This substructure is due to the rapidly changing ponderomotive potential in the short laser pulse. It is sensitive to the pulse duration and the pulse envelope and is a general feature of ionization spectra originating from a short, intense laser pulse.

AlN metal–semiconductor field-effect transistors using Si-ion implantation

Abstract: We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal–semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm−2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

ZnO/PS/p-Si heterojunction properties

Abstract: In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/ c -Si/Al due to increasing in depletion layer junction compere with PS layer.