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Institution

Cabot Corporation

CompanyBoston, Massachusetts, United States
About: Cabot Corporation is a company organization based out in Boston, Massachusetts, United States. It is known for research contribution in the topics: Carbon black & Carbon. The organization has 1279 authors who have published 1399 publications receiving 36736 citations.
Topics: Carbon black, Carbon, Alloy, Oxide, Tantalum


Papers
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Patent
15 Dec 2006
TL;DR: In this article, a composite material consisting of a polymer precursor or polymer having a refractive index and particles comprising (1) cores based on at least two metal oxides, wherein the cores comprise aggregates of primary particles, and (2) a surface-treating agent bonded to the cores.
Abstract: The invention provides a composite material comprising (a) a polymer precursor or polymer having a refractive index and (b) particles comprising (1) cores based on at least two metal oxides, wherein the cores comprise aggregates of primary particles, and (2) a surface-treating agent bonded to the cores. The difference between the refractive index of the polymer precursor or polymer and the refractive index of the particles is about 2% or less of the refractive index of the polymer precursor or polymer. The invention further provides processes for preparing such a composite material.

5 citations

Patent
21 Oct 1983
TL;DR: An improved carbon black burner for producing a carbon black with reduced grit content is described in this paper, where feedstock oil is introduced radially into an atomizing fluid conduit through ports located proximate the discharge orifice of the burner.
Abstract: An improved carbon black burner for producing a carbon black with reduced grit content wherein feedstock oil is introduced radially into an atomizing fluid conduit through ports located proximate the discharge orifice of the burner.

5 citations

Patent
18 Aug 2000
TL;DR: In this article, a silicate-based sintering aid and a method for producing it is described, which can be used to form dielectric layers in MLCCs and, in particular, ultra-thin layers.
Abstract: The present invention is directed to a silicate-based sintering aid and a method for producing the sintering aid. The sintering aid, or frit, may be added to dielectric compositions, including barium titanate-based compositions, to lower the sintering temperature. The sintering aid may be a single or multi-component silicate produced via a precipitation reaction by mixing solutions including silicon species and alkaline earth metal species. The sintering aid can be produced as nanometer-sized particles, or as coatings on the surfaces of pre-formed dielectric particles. Dielectric compositions that include the sintering aid may be used to form dielectric layers in MLCCs and, in particular, ultra-thin dielectric layers.

5 citations

Patent
Bakke Bart1
20 Apr 2005
TL;DR: In this paper, a method of making an alkali metal salt is described and involves (1) reacting at least one metal formate with an least one acid to form a metal salt in the presence of formate ions, and (2) substantially removing the formate ion from the metal salt formed in step (1).
Abstract: A method of making an alkali metal salt is described and involves (1) reacting at least one alkali metal formate with an least one acid to form an alkali metal salt in the presence of formate ions and (2) substantially removing the formate ions from the alkali metal salt formed in step (1).

5 citations

Journal ArticleDOI
TL;DR: In this paper, an alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided, where states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and observed uniaxial stress splittings.
Abstract: An alternative interpretation of optical absorption spectra due to intracenter transition within EL2 defect in GaAs is provided. The arguments are presented that states originating from the L-valley of the conduction band can account for the presence of the wide absorption band, the no-phonon line and the observed uniaxial stress splittings. Using the analogy to the DX center, this model presents an explanation for the existence of the metastable state of EL2.

5 citations


Authors

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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20212
20204
20199
201818
201714
201613