Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Journal ArticleDOI
Gate control of spin dynamics in III-V semiconductor quantum dots
Rogerio de Sousa,S. Das Sarma +1 more
TL;DR: In this article, it was shown that the g factor and the spin-flip time of a quantum dot are sensitive to band-bending interface electric fields even in the absence of wave-function penetration into the barrier.
Journal ArticleDOI
Electron spin manipulation using semimagnetic resonant tunneling diodes
Th. Gruber,M. Keim,R. Fiederling,G. Reuscher,W. Ossau,Georg Schmidt,Laurens W. Molenkamp,Andreas Waag +7 more
TL;DR: In this paper, the authors used a BeTe/Zn1−xSe/BeTe double barrier resonant tunneling diode for the injection of a spin-polarized electron current into GaAs and manipulation of the spin orientation of the injected carriers via an external voltage.
Journal ArticleDOI
Dynamic generation of spin-orbit coupling.
Congjun Wu,Shou-Cheng Zhang +1 more
TL;DR: This work proposes a new mechanism in which spin-orbit coupling can be generated dynamically in strongly correlated, nonrelativistic systems as the result of Fermi surface instabilities in higher angular momentum channels.
Journal ArticleDOI
Spin–orbit induced coupling of charge current and spin polarization
TL;DR: In this paper, a brief summary of the origins of symmetry spin-orbit interactions is given and a variety of ways in which the coupling may be made evident experimentally, with emphasis on the detection of electric-field driven spin polarization.
Journal ArticleDOI
Electrical spin injection and detection in an InAs quantum well
Hyun Cheol Koo,Hyunjung Yi,Jae Beom Ko,Joonyeon Chang,Suk Hee Han,Donghwa Jung,Seon Gu Huh,Jonghwa Eom +7 more
TL;DR: In this article, a spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.