Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
Reads0
Chats0
TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
More filters
Journal ArticleDOI
Review on graphene spintronic, new land for discovery
TL;DR: A key concept for understanding spin polarized state properties of graphene is Lieb's theorem, according to which one can predict whether a graphene structure is spin-polarized.
Journal ArticleDOI
Clear variation of spin splitting by changing electron distribution at non-magnetic metal/Bi2O3 interfaces.
TL;DR: Strong non-magnetic (NM) material dependence of spin splitting at NM/Bi2O3 interfaces is reported and control of interfacial electron distribution by tuning the difference in work function across the interface may be an effective way to tune the magnitude and sign of spin-to-charge conversion and Rashba parameter at interface.
Journal ArticleDOI
Magnetic semiconducting anatase TiO2−δ grown on (1 0 0) LaAlO3 having magnetic order up to 880 K
S. D. Yoon,Yajie Chen,Aria Yang,Trevor L. Goodrich,Xu Zuo,Katherine S. Ziemer,Carmine Vittoria,Vincent G. Harris +7 more
TL;DR: In this paper, the authors demonstrate a semiconducting material with magnetism up to 880 K without the introduction of magnetic ions, which is a new and promising approach in the search for room-temperature magnetic semiconductors.
Journal ArticleDOI
Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain
Xiaowei He,Ben Shen,Yiqiao Tang,Ning Tang,Chunming Yin,Feng Xu,Z. J. Yang,G. Y. Zhang,Yu Chen,C. G. Tang,Z.G. Wang +10 more
TL;DR: In this paper, the authors investigated the CPGE of the two-dimensional electron gas (2DEG) in Al025Ga075N/GaN heterostructures induced by infrared radiation under uniaxial strain.
Journal ArticleDOI
Ballistic spin transport through electronic stub tuners: spin precession, selection, and square-wave transmission
TL;DR: In this paper, a nearly square-wave spin transmission was obtained using a periodic system of symmetric stubs and changing their length or width, and an additional modulation was obtained upon combining stub structures with different values of the spin-orbit strength.
References
More filters
Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.