Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Opportunities and challenges for spintronics in the microelectronics industry
Bernard Dieny,Ioan Lucian Prejbeanu,Kevin Garello,Pietro Gambardella,Paulo P. Freitas,R. Lehndorff,Wolfgang Raberg,Ursula Ebels,Sergej O. Demokritov,Johan Åkerman,Johan Åkerman,Alina M. Deac,Philipp Pirro,Christoph Adelmann,Abdelmadjid Anane,Andrii V. Chumak,Andrii V. Chumak,Atsufumi Hirohata,Stéphane Mangin,Sergio O. Valenzuela,Sergio O. Valenzuela,M. Cengiz Onbaşlı,Massimiliano d'Aquino,Guillaume Prenat,Giovanni Finocchio,Luis Lopez-Diaz,Roy W. Chantrell,Oksana Chubykalo-Fesenko,P. Bortolotti +28 more
TL;DR: In this article, the potential of spintronics in four key areas of application (memory, sensors, microwave devices, and logic devices) is examined and the challenges that need to be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.
Journal ArticleDOI
Single-molecule electronics: from chemical design to functional devices
Lanlan Sun,Yuri Antonio Diaz-Fernandez,Tina A. Gschneidtner,Fredrik Westerlund,Samuel Lara-Avila,Kasper Moth-Poulsen +5 more
TL;DR: This review aims at highlighting the chemical design and synthesis of single molecule devices as well as their electrical and structural characterization, including a historical overview and the developments during the last 5 years.
Journal ArticleDOI
Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi(2)Se(3).
Marco Bianchi,Dandan Guan,Dandan Guan,Shining Bao,Jianli Mi,Bo B. Iversen,Philip D. C. King,Philip Hofmann +7 more
TL;DR: It is shown that the single Dirac cone comprising the topological state of the prototypical topological insulator Bi(2)Se(3) can co-exist with a two-dimensional electron gas (2DEG), a cornerstone of conventional electronics.
Journal ArticleDOI
Future perspectives for spintronic devices
TL;DR: Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly as mentioned in this paper, which has led to the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer.
Journal ArticleDOI
A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
Satoshi Sugahara,Masaaki Tanaka +1 more
TL;DR: In this paper, a spin MOSFET with half-metallic-ferromagnet (HMF) contacts for the source and drain is proposed and theoretically analyzed.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.