Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Hydrogen Control of Ferromagnetism in a Dilute Magnetic Semiconductor
Sebastian T. B. Goennenwein,Thomas Wassner,Hans Huebl,Martin S. Brandt,J. B. Philipp,Matthias Opel,Rudolf Gross,A. Koeder,Wladimir Schoch,Andreas Waag +9 more
TL;DR: It is shown that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively, while the density of Mn magnetic moments does not change.
Journal ArticleDOI
Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
TL;DR: In this paper, the authors discuss the fundamental and main issues facing 2D tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJ) and briefly comment on work with some specific 2D materials and highlight how they address the current challenges in MTJ; and, finally, offer an outlook and perspective of 2D MTJ.
Journal ArticleDOI
Tuning spin–orbit coupling in 2D materials for spintronics: a topical review
Kasun Premasiri,Xuan P. A. Gao +1 more
TL;DR: This work reviews the recent advances in tuning spin-orbit coupling of 2D materials which are of notable importance to the progression of spintronics.
Journal ArticleDOI
Phonon-derived ultrafast relaxation of spin-valley polarized states in MoS_{2}
TL;DR: In this paper, the spin precession of an electron in the valley is sharply coupled with the lowest-lying optical phonon that release the in-plane mirror symmetry, which indicates that spin randomization of MoS 2 is mainly caused by spin-phonon interaction.
Journal ArticleDOI
Electric-Field Control of Spin-Orbit Interaction for Low-Power Spintronics
Kang L. Wang,Xufeng Kou,Pramey Upadhyaya,Yabin Fan,Qiming Shao,Guoqiang Yu,Pedram Khalili Amiri +6 more
TL;DR: This article provides a review of the current development including fundamental physics and experimental implementations of electric-field-controlled ferromagnetism in dilute magnetic semiconductors, voltage control of magnetic anisotropy, spin-orbit-torque-assisted magnetization switching, and antiferromagnetic (AFM) material-based spin- orbitronic systems.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.