Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Hierarchical self-assembly into chiral nanostructures
TL;DR: In this article , the authors show how chirality may be utilized in the design, construction and evolution of highly ordered and complex chiral nanostructures instead of single basic units.
Journal ArticleDOI
Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface.
Simón Oyarzún,Ashis Kumar Nandy,F. Rortais,Juan-Carlos Rojas-Sánchez,M.-T. Dau,Paul Noël,P. Laczkowski,Stéphanie Pouget,Hanako Okuno,Laurent Vila,C. Vergnaud,C. Beigné,Alain Marty,Jean-Philippe Attané,Serge Gambarelli,J.-M. George,Henri Jaffrès,Stefan Blügel,Matthieu Jamet +18 more
TL;DR: A giant spin-to-charge conversion in metallic states at the Fe/Ge(111) interface due to the Rashba coupling is shown and very large charge currents are generated by direct spin pumping into the interface states from 20 K to room temperature.
Journal ArticleDOI
Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
Andreas Bringer,Th. Schäpers +1 more
TL;DR: In this article, the spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowires containing a surface two-dimensional electron gas as a model.
Journal ArticleDOI
Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect
TL;DR: In this article, a spin dependent recombination (SDR) method was proposed for metal-oxide-semiconductor field effect transistors, which greatly amplifies the spin dependent fraction of the investigated transistor current and concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects at the semiconductor/oxide interface.
Journal ArticleDOI
Spin and orbital moments of nanoscale Fe3O4 epitaxial thin film on MgO/GaAs(100)
Wenqing Liu,Yongbing Xu,Ping Kwan Johnny Wong,N. J. Maltby,Shunpu Li,Xuefeng Wang,J. Du,B. You,Jing Wu,Peter Bencok,Rui Zhang +10 more
TL;DR: In this paper, a nanoscale Fe3O4 epitaxial thin film was synthesized on MgO/GaAs(100) spintronic heterostructure, and studied with X-ray magnetic circular dichroism.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.