Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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High Electron Mobility Exceeding 104 cm2 V-1 s-1 in MgxZn1-xO/ZnO Single Heterostructures Grown by Molecular Beam Epitaxy
Atsushi Tsukazaki,Hiroyuki Yuji,Shunsuke Akasaka,Kentaro Tamura,Ken Nakahara,Tetsuhiro Tanabe,Hidemi Takasu,Akira Ohtomo,Masashi Kawasaki +8 more
TL;DR: In this paper, a single heterostructures were prepared on Zn-polar ZnO substrates by using plasma assisted molecular beam epitaxy (MBE), which showed a metallic conductivity below 50 K and a mobility exceeding 104 cm2 V-1 s-1 at 0.5 K.
Journal ArticleDOI
Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene.
Sergey Dushenko,Sergey Dushenko,Hiroki Ago,Kenji Kawahara,Tetsuya Tsuda,Susumu Kuwabata,Taishi Takenobu,Teruya Shinjo,Yuichiro Ando,Masashi Shiraishi +9 more
TL;DR: It is determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene and the dominance of the intrinsic over Rashba spin-orbit interaction is shown, a long-standing question in graphene research.
Journal ArticleDOI
Injecting spin into electronics
TL;DR: In this article, the authors show how to inject spin into a semiconductor, which is an emerging field that has already delivered commercial devices based on metallic materials, and the goal of making similar devices from semiconductors is getting nearer.
Journal ArticleDOI
Zinc oxide for electronic, photovoltaic and optoelectronic applications
Marek Godlewski,Elzbieta Guziewicz,Krzysztof Kopalko,G. Łuka,M. Łukasiewicz,Tomasz A. Krajewski,Bartlomiej S. Witkowski,Sylwia Gieraltowska +7 more
TL;DR: The atomic layer deposition (ALD) technique has great potential for widespread use in the production of ZnO films for applications in electronic, photovoltaic (PV), and optoelectronic devices as discussed by the authors.
Journal ArticleDOI
Spin dynamics and quantum transport in magnetic semiconductor quantum structures
David D. Awschalom,Nitin Samarth +1 more
TL;DR: An overview of recent developments in the experimental study of II-VI magnetic semiconductor quantum structures, with particular emphasis on the dynamical behavior of field-tunable electronic spin states and spin-dependent quantum transport is provided in this paper.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.