Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration
TL;DR: In this paper, the authors demonstrate the electrical injection and detection of spin-polarized electrons in the Co2FeSi/GaAs hybrid system using lateral transport structures and observe spin valve signatures and characteristic Hanle curves both in the non-local and the local configuration.
Journal ArticleDOI
Robust Surface Doping of Bi2Se3 by Rubidium Intercalation
Marco Bianchi,Richard C. Hatch,Zhongshan Li,Philip Hofmann,Fei Song,Jianli Mi,Bo B. Iversen,Zakaria M. Abd El-Fattah,Peter Loeptien,Lihui Zhou,Alexander A. Khajetoorians,Jens Wiebe,Roland Wiesendanger,Justin W. Wells,Justin W. Wells +14 more
TL;DR: In this paper, the van der Waals gaps in the quintuple layer structure of Bi2Se3 were used to intercalate the Rb atoms and accelerate the surface reactivity.
Journal ArticleDOI
Phase-coherent quantum mechanical spin transport in a weakly disordered quasi-one-dimensional channel
Marc Cahay,Supriyo Bandyopadhyay +1 more
TL;DR: In this paper, a transfer matrix technique is used to model phase-coherent spin transport in the weakly disordered quasi-one-dimensional channel of a gate-controlled electron spin interferometer.
Journal ArticleDOI
Electric-field control of tunneling magnetoresistance effect in a Ni∕InAs∕Ni quantum-dot spin valve
Kohei Hamaya,M. Kitabatake,Kenji Shibata,Minkyung Jung,Minoru Kawamura,Kazuhiko Hirakawa,Tomoki Machida,Tomoyasu Taniyama,Satomi Ishida,Y. Arakawa +9 more
TL;DR: In this paper, an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot spin-valve device was demonstrated using ferromagnetic Ni nanogap electrodes.
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Spin- 3 2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
TL;DR: In this paper, a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires is presented, where the authors elucidate the interplay between quantum confinement and heavy-hole-light-hole mixing and identify a certain robustness displayed by lowlying hole-wire subband edges with respect to changes in the shape or strength of the wire potential.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
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Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.