Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Rashba spin-splitting of electrons in asymmetric quantum wells
P. S. Eldridge,W. J. H. Leyland,Pavlos G. Lagoudakis,Richard T. Harley,Richard T. Phillips,Roland Winkler,Mohamed Henini,D. Taylor +7 more
TL;DR: In this article, a comparison of conduction electron spin-splitting in III-V quantum wells caused by asymmetric band edges with that due to applied electric field is made.
Journal ArticleDOI
Pathway to the piezoelectronic transduction logic device.
Paul M. Solomon,Brian A. Bryce,Marcelo A. Kuroda,Marcelo A. Kuroda,Ryan Keech,Smitha Shetty,Timothy M. Shaw,Matthew Copel,L. W. Hung,Alejandro G. Schrott,Christine Armstrong,M. S. Gordon,Kathleen B. Reuter,Thomas N. Theis,Wilfried Haensch,Stephen M. Rossnagel,Hiroyuki Miyazoe,Bruce G. Elmegreen,X.-H. Liu,Susan Trolier-McKinstry,G. J. Martyna,Dennis M. Newns +21 more
TL;DR: In this article, the first physical PET devices are reported, showing both on/off switching and cycling, representing the early steps on a developmental pathway to PET technology with potential to contribute to the IT industry.
Journal ArticleDOI
Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well
TL;DR: In this article, a Monte Carlo model was developed to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a nonmagnetic low-dimensional semiconductor structure.
Journal ArticleDOI
Electronic structure modification of the KTaO 3 single-crystal surface by Ar + bombardment
Neha Wadehra,Ruchi Tomar,Soumyadip Halder,Minaxi Sharma,Inderjit Singh,Nityasagar Jena,Bhanu Prakash,Abir De Sarkar,Chandan Bera,Ananth Venkatesan,Suvankar Chakraverty +10 more
TL;DR: In this paper, a cubic perovskite oxide (KTaO) with oxygen vacancies has been investigated and it was shown that the conductivity changes as a function of conductivity which is controlled by irradiation time.
Journal ArticleDOI
Submonolayer growth of Fe on a Ga As ( 100 ) − 2 × 6 reconstructed surface
Adrian M. Ionescu,M. Tselepi,D. M. Gillingham,G. Wastlbauer,S. J. Steinmuller,Harvey E. Beere,D. A. Ritchie,J. A. C. Bland +7 more
TL;DR: In this paper, the results of in situ STM measurements of the submonolayer growth of Fe on the Ga-rich and As-terminated GaAs(100) surface were presented.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.