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Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Study of the structural and magnetic characteristics of epitaxial Fe 3 Si/Si(111) films
I. A. Yakovlev,S. N. Varnakov,S. N. Varnakov,Boris A. Belyaev,Boris A. Belyaev,Boris A. Belyaev,Sergey M. Zharkov,Sergey M. Zharkov,Maxim S. Molokeev,I. A. Tarasov,I. A. Tarasov,Sergey Ovchinnikov,Sergey Ovchinnikov,Sergey Ovchinnikov +13 more
TL;DR: In this paper, the structural and magnetic properties of the epitaxial structure of a single-crystal Fe3Si silicide film with the orientation Si[111] was identified using X-ray structural analysis, transmission electron microscopy, and reflection high-energy electron diffraction.
Journal ArticleDOI
Band gap and partial density of states for ZnO: Under high pressure
TL;DR: In this paper, the effect of spin-orbit coupling on the electronic band structure, partial density of states (PDOS), and the band gap of the four phases of ZnO, namely B4 (wurtzite), B3 (zinc-blende), B1 (rocksalt) and B2 (CsCl-type), has been investigated using the plane-wave pseudo-potential code CASTEP with three different schemes: the generalized gradient approximation (GGA) in the latter approach Perdew-Burk-Ernzerhof (
Journal ArticleDOI
Quantum transport in Rashba spin-orbit materials: A review
TL;DR: This review article describes spin-dependent transport in materials with spin-orbit interaction of Rashba type, mainly focus on semiconductor heterostructures, however it considers topological insulators, graphene and hybrid structures involving superconductors as well.
Journal ArticleDOI
Rashba spin splitting in semiconductor quantum wires
TL;DR: In this article, a general three-dimensional model for asymmetric semiconductor quantum wires is introduced with exact and analytical solutions for the spin-dependent electronic structure, valid in both strong and weak Rashba spin-orbit coupling regimes.
Journal ArticleDOI
Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices.
Zedong Yang,Brett Heischmidt,Sasa Gazibegovic,Ghada Badawy,Diana Car,Paul A. Crowell,Erik P. A. M. Bakkers,Vlad Pribiag +7 more
TL;DR: The first experimental investigation of spin transport across InSb NWs with ferromagnetic (FM) contacts is reported, and signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime are observed.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
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On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.