Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
Reads0
Chats0
TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
More filters
Journal ArticleDOI
Theoretical and experimental considerations on the spin field effect transistor
TL;DR: In this paper, the authors proposed a spin field effect transistor (spin-FET) as a structure for the investigation of the physics of spin polarized transport in ferromagnet/semiconductor structures and as a device for fast electronics.
Journal ArticleDOI
Zeeman ratchets: pure spin current generation in mesoscopic conductors with non-uniform magnetic fields
TL;DR: In this article, a quantum wire realized in a two-dimensional electron gas (2DEG) was used as a spin ratchet to induce a net spin current without accompanying net charge transport.
Journal ArticleDOI
Effect of Rashba interaction and Coulomb correlation on the ground state energy of a GaAs quantum dot with parabolic confinement
TL;DR: In this article, the ground state energy of a parabolically confined quantum dot placed in an external magnetic field was studied taking into account the effects of the Rashba spin-orbit interaction (SOI) and electron-electron interaction.
Journal ArticleDOI
Tunneling currents in ferromagnetic systems with multiple broken symmetries
TL;DR: In this paper, the authors derived analytical results for the transport properties in unconventional superconductors and ferromagnetic systems with multiple broken symmetries, and showed that the critical amplitudes of these currents can be adjusted by the relative magnetization direction on each side of the junction.
Journal ArticleDOI
Model for spin-orbit effects in two-dimensional semiconductors in magnetic fields
TL;DR: In this paper, the interplay between Dresselhaus, Bychkov-Rashba, and Zeeman interactions in a two-dimensional semiconductor quantum system under the action of a magnetic field was analyzed.
References
More filters
Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.