Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Observation of the Spin-Orbit Gap in Bilayer Graphene by One-Dimensional Ballistic Transport
Luca Banszerus,Luca Banszerus,B. Frohn,Thomas Fabian,Sowmya Somanchi,A. Epping,A. Epping,M. Müller,M. Müller,Daniel Neumaier,Kenji Watanabe,T. Taniguchi,Florian Libisch,Bernd Beschoten,Fabian Hassler,Christoph Stampfer,Christoph Stampfer +16 more
TL;DR: In this paper, measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling are reported.
Journal ArticleDOI
Electronic Charge and Spin Density Distribution in a Quantum Ring with Spin-Orbit and Coulomb Interactions
TL;DR: In this article, the authors studied the charge and spin density distributions in a nanoring structure endowed with Rashba and Dresselhaus spin-orbit interactions (SOIs) and found that when more than two electrons are considered, the charge density deformations induced by SOIs are dramatically flattened by the Coulomb repulsion.
Journal ArticleDOI
Modulated Rashba interaction in a quantum wire: Spin and charge dynamics
TL;DR: Japaridze et al. as mentioned in this paper investigated the role of charge density wave correlations in the quantum wire due to the periodic gate configuration that produces the Rashba modulation and showed that depending on the relative phase between the two modulations, the charge-density wave correlations may either enhance or reduce the current blockade effect.
Journal ArticleDOI
Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices
TL;DR: In this paper, the authors present a theory for spin diffusion in disordered organic semiconductors based on hyperfine coupling, taking into account a combination of incoherent carrier hopping and coherent spin precession in the random hyperfine magnetic fields.
Journal ArticleDOI
Ballistic transport in one-dimensional loops with Rashba and Dresselhaus spin-orbit coupling
TL;DR: In this article, the combined effect of Rashba and Dresselhaus spin-orbit interactions in polygonal loops formed by quantum wires is discussed, when the electron are injected in a node and collected at the opposite one.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.