Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures : progress and perspectives
TL;DR: In this article, the authors review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices.
Journal ArticleDOI
Lateral spin injection in germanium nanowires.
TL;DR: In this article, the authors demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering, showing the conductivity matching required for spin injection.
Journal ArticleDOI
Anisotropic spin splitting and spin relaxation in asymmetric zinc-blende semiconductor quantum structures
TL;DR: In this paper, the spin relaxation rates from anisotropic spin splittings of electron subbands in $n\ensuremath{-}(001)$ zinc blende semiconductor quantum structures calculated self-consistently in the multiband envelope function approach were determined.
Journal ArticleDOI
Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers
Jinming Dong,L. C. Chen,J. Q. Xie,T. A. R. Müller,D. M. Carr,Chris Palmstrom,Stuart McKernan,Q. Pan,Richard D. James +8 more
TL;DR: In this article, the authors showed that Ni2MnGa thin films can grow pseudomorphically on a relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 A and c=6.07 A).
Journal ArticleDOI
Phase-Tunable Synthesis of Ultrathin Layered Tetragonal CoSe and Nonlayered Hexagonal CoSe Nanoplates.
Huifang Ma,Zhong Wan,Jia Li,Ruixia Wu,Zhengwei Zhang,Bo Li,Bei Zhao,Qi Qian,Yuan Liu,Qing-lin Xia,Guang-hua Guo,Xidong Duan,Xiangfeng Duan +12 more
TL;DR: Electrical transport studies reveal that both the tetragonal and hexagonal CoSe nanoplates show strong thickness-tunable electrical properties and excellent breakdown current density.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.