Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Journal ArticleDOI
Oxide nanowires for spintronics: materials and devices.
TL;DR: This work reviews the recent breakthroughs related to the applications of oxide nanowires in spintronics from the perspectives of both material candidates and device fabrication.
Journal ArticleDOI
Spin-current generation and detection in the presence of an ac gate
TL;DR: In this article, an all-electric method of spin-current detection is suggested, which measures the voltage on the gate in the vicinity of a two-dimensional electron gas carrying a time-dependent spin current.
Journal ArticleDOI
Magnetotransport properties of individual InAs nanowires
Sajal Dhara,Hari S. Solanki,Vibhor Singh,Arjun Narayanan,Prajakta Chaudhari,Mahesh Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh +7 more
TL;DR: In this article, the magnetotransport properties of individual InAs nanowires in a field-effect transistor geometry were investigated, and the role of skipping orbits and the nature of surface scattering is essential in understanding high-field magnetotranport in nanowsires.
Journal ArticleDOI
Spin-texture inversion in the giant Rashba semiconductor BiTeI.
Henriette Maaß,Hendrik Bentmann,Christoph Seibel,Christian Tusche,Sergey V. Eremeev,Thiago R. F. Peixoto,Oleg E. Tereshchenko,Konstantin A. Kokh,Konstantin A. Kokh,Evgueni V. Chulkov,Jürgen Kirschner,Friedrich Reinert +11 more
TL;DR: It is demonstrated that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization.
Patent
Spin transistor, programmable logic circuit, and magnetic memory
Yoshiaki Saito,Hideyuki Sugiyama +1 more
TL;DR: A spin transistor as discussed by the authors is a non-magnetic semiconductor substrate having a channel region, a first area, and a second area, where the channel region introduces electron spin between the conductive layers.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.