Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Journal ArticleDOI
Zero-field spin splitting and spin lifetime in n-InSb/In1−xAlxSb asymmetric quantum well heterostructures
A. M. Gilbertson,A. M. Gilbertson,M. Fearn,John H. Jefferson,B. N. Murdin,Philip Derek Buckle,Lesley F. Cohen +6 more
TL;DR: In this article, the spin-orbit coupling parameters for the lowest conduction subband due to structural inversion asymmetry (SIA) and BIA were calculated for a range of carrier densities in [001]-grown δ-doped n-type InSb∕In1−xAlxSb quantum wells using the established eight-band k⋅p formalism.
Journal ArticleDOI
Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films
Hosik Lee,Jino Im,Hosub Jin +2 more
TL;DR: In this paper, in-plane ferroelectricity in (001)-oriented SnTe thin films can support both electrical spin controllability and suppression of spin dephasing, which can host a longlived helical spin mode known as a persistent spin helix (PSH).
Journal ArticleDOI
Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates
TL;DR: In this article, the authors investigated the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As cladded with In 0.75Al0.
Journal ArticleDOI
Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide M X monolayers ( M = Sn or Ge and X = S , Se, or Te)
TL;DR: In this paper, the persistent spin helix (PSH) can be intrinsically achieved on a two-dimensional (2D) group-IV monochalcogenide $MX$ monolayer, a new class of 2D materials having in-plane ferroelectricity.
Proceedings ArticleDOI
An overview of spin-based integrated circuits
Wang Kang,Weisheng Zhao,Zhaohao Wang,Jacques-Olivier Klein,Yue Zhang,Djaafar Chabi,Youguang Zhang,Dafiné Ravelosona,Claude Chappert +8 more
TL;DR: The status and prospects of spin-based integrated circuits under intense investigation are overviewed and particularly their merits and challenges for practical applications are addressed.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.