Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Graphene Spin Transistor
TL;DR: In this article, the first non-local four-probe experiments on graphene contacted by ferromagnetic Permalloy electrodes were performed, and the nonlocal resistance signal can be observed up to at least T = 300 K.
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Focus on the Rashba effect
TL;DR: In this paper, the authors provide a brief account on the history of the Rashba effect including material that was previously not easily accessible before summarizing the key results of the present focus issue as a guidance to the reader.
Journal ArticleDOI
Strong Room-Temperature Ferromagnetism in Co2+-Doped TiO2 Made from Colloidal Nanocrystals
TL;DR: In this paper, a colloidal cobalt-doped TiO2 (anatase) nanocrystals were synthesized and studied by electronic absorption, magnetic circular dichroism, transmission electron microscopy, magnetic susceptibility, and extended X-ray absorption fine structure measurements.
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In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
Thomas N. Theis,Paul M. Solomon +1 more
TL;DR: The possible physical approaches to achieving reduced power dissipation relative to the field-effect transistor are outlined, and these approaches are illustrated by citing current exploratory device research.
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2D materials for spintronic devices
TL;DR: This review discusses various 2D materials, including graphene and other inorganic 2D semiconductors, in the context of scientific and technological advances in spintronic devices and introduces the spin-orbit and spin-valley coupled properties of 2D material to explore their potential to address the crucial issues of contemporary electronics.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
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Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
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On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.