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Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Review on spintronics: Principles and device applications
Atsufumi Hirohata,Keisuke Yamada,Yoshinobu Nakatani,Lucian Prejbeanu,Bernard Dieny,Philipp Pirro,Burkard Hillebrands +6 more
TL;DR: In this paper, the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments, is described with respect to the spin generation methods as detailed in Sections 2-~-9.
Journal ArticleDOI
Origin and properties of the gap in the half-ferromagnetic Heusler alloys
TL;DR: In this article, the authors studied the role of chemical composition in the half-ferromagnetic Heusler alloys using the full-potential screened Korringa-Kohn-Rostoker method.
Journal ArticleDOI
Spin–orbit qubit in a semiconductor nanowire
TL;DR: In this paper, a spin-orbit quantum bit (qubit) is implemented in an indium arsenide nanowire, where the spinorbit interaction is so strong that spin and motion can no longer be separated.
Journal ArticleDOI
Magnetism in ultrathin film structures
TL;DR: In this article, the results of recent experimental and theoretical studies of well characterized epitaxial structures based on Fe, Co and Ni to illustrate how intrinsic fundamental properties such as the magnetic exchange interactions, magnetic moment and magnetic anisotropies change markedly in ultrathin films as compared with their bulk counterparts, and to emphasize the role of atomic scale structure, strain and crystallinity in determining the magnetic properties.
Journal ArticleDOI
Control of spin precession in a spin-injected field effect transistor.
Hyun Cheol Koo,Jae Hyun Kwon,Jonghwa Eom,Jonghwa Eom,Joonyeon Chang,Suk Hee Han,Mark Johnson +6 more
TL;DR: The injection and detection of spin between two ferromagnetic contacts are demonstrated and how the magnitude of the spin-current between the source and drain contacts can be controlled by a voltage applied to a gate is shown.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.