Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Journal ArticleDOI
Massless or heavy due to two-fold symmetry: Surface-state electrons at W(110)
Koji Miyamoto,Akio Kimura,Taichi Okuda,Kenya Shimada,Hideaki Iwasawa,Hirokazu Hayashi,Hirofumi Namatame,Masaki Taniguchi,Masaki Taniguchi,Markus Donath +9 more
TL;DR: In this article, a detailed angle-resolved photoemission study with s −a nd p-polarized light along three different symmetry lines is presented, showing that the Dirac-cone-like feature appears alongHa ndS, while it is strongly deformed alongN. The flattened Dirac cone of the surface state is caused by hybridization with bulk continuum states of � 1 and � 2 symmetry.
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Fabrication and characterisation of nanospintronic devices
TL;DR: In this article, an improved fabrication scheme for carbon based nanospintronic devices and demonstrate the necessity for careful data analysis to investigate the fundamental physical mechanisms leading to magnetoresistance.
Journal ArticleDOI
Charge and spin dynamics driven by ultrashort extreme broadband pulses : A theory perspective
TL;DR: In this paper, the influence of a particular pulse shape on the post-pulse dynamics is reduced to several integral parameters entering the expression for the quantum map, and the validity range of this reduction scheme for different strengths of the driving fields is established and discussed for particular nanostructures.
Book ChapterDOI
Multiferroic and Magnetoelectric Materials
TL;DR: In this paper, the linear ME effect has been shown to control spintronic devices very efficiently, e.g. by using the classic ME antiferromagnet Cr2O 3.
Journal ArticleDOI
Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction
TL;DR: In this paper, the authors investigated the traversal time of a quasi-one-dimensional waveguide that contains the ferromagnetic/semiconductor/ferromagnetic heterojunction in the presence of the Rashba spin-orbit interaction.
References
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Journal ArticleDOI
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TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.