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Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Tunnel transistor having spin-dependent transfer characteristic and nonvolatile memory using same
Satoshi Sugahara,Masaaki Tanaka +1 more
TL;DR: In this paper, the channel region of a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and the transfer conductance can be determined by the relative directions of magnetization.
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Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
Jinsong Xu,Simranjeet Singh,Jyoti Katoch,Guanzhong Wu,Tiancong Zhu,Igor Zutic,Roland Kawakami +6 more
TL;DR: In this paper, gate-tunable spin transport in encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts was demonstrated. And the resulting gate-controlled spin inversion in graphene holds promise for spintronic devices and to realize exotic topological states, from quantum spin Hall and quantum anomalous Hall effects to Majorana fermions and skyrmions.
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Dimensionally constrained D'yakonov–Perel' spin relaxation in n-InGaAs channels: transition from 2D to 1D
TL;DR: In this paper, the authors investigate both the spin dynamics and the magnetotransport properties of 2D n-InGaAs channels as a function of the channel width and find that the electron spin scattering in the channels is limited by a dimensionally constrained D'yakonov-Perel' mechanism.
Journal ArticleDOI
In situ Brillouin scattering study of the thickness dependence of magnetic anisotropy in uncovered and Cu-covered Fe/GaAs(100) ultrathin films
TL;DR: In this article, the dynamical magnetic properties of ultrathin Fe/GaAs(001) films in the thickness range 5-100 A have been studied by in situ Brillouin light scattering.
Journal ArticleDOI
Spin-orbit splitting in graphene on metallic substrates.
TL;DR: The small spin-orbit splitting induced by the Ag substrates indicates that heavy metals do not always produce large SO splitting, and provides important insights that are useful for understanding the metal-induced Rashba effect in graphene.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.