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Journal ArticleDOI

Electronic analog of the electro‐optic modulator

Supriyo Datta, +1 more
- 12 Feb 1990 - 
- Vol. 56, Iss: 7, pp 665-667
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
Abstract
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.

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Citations
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Spin filtering in an electromagnetic structure

TL;DR: In this article, the authors investigated spin-dependent resonant tunneling through double-barrier electromagnetic structure and showed that the significant amount of spin polarization with nice resonant structures can be achieved by applying a proper electric field subject to the given magnetic barriers.
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Memory applications from 2D materials

TL;DR: An overview of the progress made, advantages, and challenges toward practical application of 2DLM-based memory units, and a proof-of-concept heterostructure consisting of 2 DLMs that fulfill the function of a memory unit and selector with desired characteristics for RRAM integration are provided.
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Hybrid epitaxial structures for spintronics

TL;DR: The use of electron spin in future spintronic applications requires hybrid ferromagnetic/semiconductor structures with well controlled materials properties as discussed by the authors, including single phase, single crystal, perfect interfaces, defect control.
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Rashba effect within the coherent scattering formalism

TL;DR: In this article, the influence of spin-orbit coupling in two-dimensional systems is investigated within the framework of the Landauer-Buttiker coherent scattering formalism, where the current is expressed as it is in the standard spin-independent case, but with the spin label replaced by a new label, which is called the spinorbit coupling label.
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Rashba spin precession in a magnetic field

TL;DR: In this article, an external magnetic field perpendicular to the plane of the electron gas is applied to the two-dimensional electron gas in order to enhance the lateral confining potential of the system.
References
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Journal ArticleDOI

Oscillatory effects and the magnetic susceptibility of carriers in inversion layers

TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI

Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.

TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI

Spin splitting in semiconductor heterostructures for B-->0.

TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{ e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI

On the possibility of transistor action based on quantum interference phenomena

TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI

Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0

TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.
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