Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Ab initio study of electronic structure and magnetic properties in ferromagnetic Be1−xMnxSe and Be1−xMnxTe alloys
N.A. Noor,Syed Muhammad Alay-e-Abbas,Syed Muhammad Alay-e-Abbas,Y. Saeed,S.M. Ghulam Abbas,A. Shaukat +5 more
TL;DR: In this article, structural, electronic and magnetic properties of Mn-doped BeSe and BeTe have been studied by employing the full-potential linear augmented plane waves plus local orbitals (FP-LAPW+lo) method within the spin-polarized density functional theory (DFT).
Journal ArticleDOI
Observation of orientation- and k-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures
J.C.H. Chen,Oleh Klochan,Adam P. Micolich,Alex R. Hamilton,T. P. Martin,L. H. Ho,Ulrich Zülicke,Dirk Reuter,Andreas D. Wieck +8 more
TL;DR: In this paper, the authors studied the spin-splitting in hole quantum wires oriented along the [011] and crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure.
Taking topological insulators for a spin : Towards understanding of spin and charge transport in Bi2Se3
TL;DR: In this paper, the authors present a proefschrift of spin-and ladingstransport in topologische isolatoren, which is used to evaluate the effect of spin spin on spintron toepassingen.
Journal ArticleDOI
Effect of Rashba and Dresselhaus spin-orbit interactions on a D0 impurity in a two-dimensional Gaussian GaAs quantum dot in the presence of an external magnetic field
TL;DR: In this article, the binding energy of a hydrogenic-like donor complex D 0 placed in a two-dimensional Gaussian quantum dot GaAs semiconductor was determined incorporating the Rashba and Dresselhaus spin-orbit interactions in the presence of an externally applied magnetic field.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.