Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Large positive magnetoresistance in nonstoichiometric NiMnSb thin films on silicon
Will R. Branford,Steven Clowes,M. H. Syed,Y. Bugoslavsky,Spyros Gardelis,John Androulakis,John Giapintzakis,C.E.A. Grigorescu,Andrey Berenov,S. B. Roy,Lesley F. Cohen +10 more
TL;DR: In this paper, a systematic study of the transport properties of pulsed-laser-deposited NiMnSb films on silicon as a function of film thickness is presented.
Journal ArticleDOI
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
P. Barate,Shiheng Liang,Tiantian Zhang,Frougier Julien,Marta L. Vidal,Pierre Renucci,Xavier Devaux,Bo Xu,Henri Jaffrès,J.-M. George,Xavier Marie,Michel Hehn,Stéphane Mangin,Y. Zheng,Thierry Amand,Bingshan Tao,Xiufeng Han,Zhanguo Wang,Yuan Lu +18 more
TL;DR: In this article, an efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector.
Journal ArticleDOI
Nonlinear optical conductivity of two-dimensional semiconductors with Rashba spin-orbit coupling in terahertz regime
TL;DR: In this article, two-dimensional semiconductors with Rashba spin-orbit interaction (R2DG) exhibit exceptionally strong nonlinear optical response (NOR) in the terahertz frequency regime.
Journal ArticleDOI
Gate Tunable In- and Out-Of-Plane Spin-Orbit Coupling and Spin Splitting Anisotropy at LaAlO3/SrTiO3 (110) Interface
Kalon Gopinadhan,Anil Annadi,Younghyun Kim,Amar Srivastava,Brijesh Kumar,Jingsheng Chen,J. M. D. Coey,Ariando,Thirumalai Venkatesan +8 more
TL;DR: In this paper, the spin splitting of 25 meV at the LaAlO3/SrTiO3 (110) interface for in-plane spins at a current density of 1.4x104 A/cm2 was reported.
Journal ArticleDOI
Magneto-optics of single Rashba spintronic quantum dots subjected to a perpendicular magnetic field: Fundamentals
TL;DR: In this article, the effect of spin-orbit interaction (SOI) on the Fock-Darwin energy spectrum in the presence of a perpendicular (to the original two-dimensional electron gas) magnetic field was investigated.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.