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Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Realization of single terminated surface of perovskite oxide single crystals and their band profile: (LaAlO3)(0.3)(Sr2AlTaO6)(0.7), SrTiO3 and KTaO3 case study
TL;DR: In this paper, a unified framework was developed and demonstrated to realize a single terminated surface of KTaO 3, (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ), 0.7 and SrTiO 3 (001) oriented single crystals.
Journal ArticleDOI
Thermopower enhancement in quantum wells with the Rashba effect
Lihua Wu,Lihua Wu,Jiong Yang,Shanyu Wang,Ping Wei,Jihui Yang,Wenqing Zhang,Wenqing Zhang,Lidong Chen +8 more
TL;DR: In this paper, the authors theoretically demonstrate that the thermopower in two-dimensional quantum wells (QWs) can be significantly enhanced by its Rashba spin-splitting effect, governed by the one-dimensional density of states in the low Fermi energy region.
Journal ArticleDOI
Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
Inga A. Fischer,Li-Te Chang,Christoph Sürgers,Erlend Rolseth,Sebastian Reiter,Stefan Stefanov,Stefano Chiussi,Jianshi Tang,Kang L. Wang,Jörg Schulze +9 more
TL;DR: In this paper, electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n+Ge tunneling contacts was reported.
Journal Article
Spin transport in antiferromagnetic insulators: progress and challenges
TL;DR: In this paper, the recent progress of spin transport in antiferromagnetic insulators is briefly described with an introduction to the experimental techniques, including the observations regarding the temperature dependence of spin transmission, spin current switching and the negative spin Hall magnetoresistance.
Journal ArticleDOI
Termination-dependent surface properties in the giant-Rashba semiconductors BiTe X ( X = Cl , Br, I)
Sebastian Fiedler,Thomas Bathon,Sergey V. Eremeev,Sergey V. Eremeev,Oleg E. Tereshchenko,Oleg E. Tereshchenko,Konstantin A. Kokh,Konstantin A. Kokh,Evgueni V. Chulkov,Paolo Sessi,Hendrik Bentmann,Matthias Bode,Friedrich Reinert +12 more
TL;DR: In this article, the structural and electronic properties of BiTeI(0001) surfaces were investigated by combining scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), and density functional theory calculations.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.