Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Spin Hall effect and Berry phase in two-dimensional electron gas
TL;DR: In this article, the spin Hall effect is investigated in a high mobility two-dimensional electron system with the spin-orbital coupling of both the Rashba and the Dresselhaus types.
Journal ArticleDOI
Technology and materials issues in semiconductor-based magnetoelectronics
J. De Boeck,W. Van Roy,Jo Das,V. F. Motsnyi,Ziyang Liu,L. Lagae,H. Boeve,Kristof Dessein,Gustaaf Borghs +8 more
TL;DR: In this article, the authors review the technology and materials aspects of both the MRAM and spintronics fields that highlight the challenges that must be overcome in order to make magnetic (multilayer) films a standard ingredient in future electronics.
Journal ArticleDOI
Progress toward electrical injection of spin-polarized electrons into semiconductors
TL;DR: These results demonstrate that spin injecting contacts can be formed using a very familiar and widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing.
Journal ArticleDOI
Heusler alloys for spintronic devices: review on recent development and future perspectives
Kelvin Elphick,William James Frost,Marjan Samiepour,Takahide Kubota,Koki Takanashi,Hiroaki Sukegawa,Seiji Mitani,Seiji Mitani,Atsufumi Hirohata +8 more
TL;DR: Heusler alloys are theoretically predicted to become half-metals at room temperature (RT) and by employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed.
Unipolar spin diodes and transistors
TL;DR: Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
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Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
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On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
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Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.