Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Spin-orbit coupling and intrinsic spin mixing in quantum dots
TL;DR: In this article, the spin-orbit coupling effects in narrow-gap InSb quantum dots are studied and competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum.
Journal ArticleDOI
Spintronics and spintronics materials
TL;DR: In this paper, a review of spin-spin interactions and spin relaxation in semiconductors as well as spin and spin injection related effects in the condensed matter is given, requirements for spintronic materials are formulated, methods of synthesis of spintronics are described, and physicochemical properties of some materials are characterized.
Journal ArticleDOI
Large Bychkov-Rashba spin-orbit coupling in high-mobilityGaN∕AlxGa1−xNheterostructures
S. Schmult,Michael J. Manfra,A. Punnoose,A. Punnoose,A. M. Sergent,Kirk W. Baldwin,R. J. Molnar +6 more
TL;DR: In this paper, the authors present low-temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide band gap.
Journal ArticleDOI
Semiclassical Monte Carlo model for in-plane transport of spin-polarized electrons in III–V heterostructures
TL;DR: In this paper, the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells is studied and the spin dynamics is controlled by the spin-orbit interaction, which arises due to the bulk crystalline-structure asymmetry and quantum-well inversion asymmetry.
Journal ArticleDOI
Detection of Spin Polarized Carrier in Silicon Nanowire with Single Crystal MnSi as Magnetic Contacts
TL;DR: Using single crystal MnSi/p-Si/MnSi nanowire heterostructures, the spin transport in silicon nanostructure is studied and carrier tunneling via the Schottky barrier and spin polarized carrier transport in the silicon nanodevices are studied.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.