Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve
Kohei Hamaya,M. Kitabatake,Kenji Shibata,Minkyung Jung,Minoru Kawamura,Kazuhiko Hirakawa,Tomoki Machida,S. Ishida,Y. Arakawa +8 more
TL;DR: In this paper, an electric field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device was demonstrated.
Journal ArticleDOI
Spin transport of electrons through quantum wires with a spatially modulated Rashba spin-orbit interaction
TL;DR: In this paper, the authors studied the ballistic transport of spin-polarized electrons through quantum wires in which the Rashba spin-orbit interaction (SOI) is spatially modulated Subband mixing, due to SOI, between the two lowest subbands is taken into account.
Journal ArticleDOI
Cubic Dresselhaus spin-orbit coupling in 2D electron quantum dots
TL;DR: The magnitude of the spin-orbit induced avoided crossings in a closed quantum dot in a Zeeman field using a semiclassical billiard model and previous analyses based on random matrix theory suggests that the GaAs Dresselhaus coupling constant gamma is approximately 9 eV A3, significantly less than the commonly cited value.
Journal ArticleDOI
A valley valve and electron beam splitter
Jing Li,Rui-Xing Zhang,Zhenxi Yin,Jianxiao Zhang,Kenji Watanabe,Takashi Taniguchi,Chao-Xing Liu,Jun Zhu +7 more
TL;DR: The creation of chiral valley Hall states on the boundary between oppositely gated regions of bilayer graphene and guided through their sample using spatially modulated gating pave a path to building a scalable, coherent quantum transportation network based on the kink states.
Journal ArticleDOI
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals
TL;DR: In this paper, the authors presented a theoretical study of electrically tunable 2D ferromagnetism in van der Waals layered CrSBr and CrSeBr semiconductors with a high Curie temperature of ∼150 K and a sizable bandgap.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
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Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.