Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
Citations
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Spin-dependent transmission through a chain of rings: influence of a periodically modulated spin-orbit interaction strength or ring radius
TL;DR: In this paper, the authors studied ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength α, and showed that due to destructive spin interferences the chain can be totaly opaque for certain ranges of k the width of which depends on the value of α.
Journal ArticleDOI
Giant switchable Rashba effect in oxide heterostructures
TL;DR: In this paper, it was shown that the electric field is amplified and stored as a ferroelectric Ti-O distortion which, through the network of oxygen octahedra, induces a large (Os,Ir,Ru)-O distortion.
Journal ArticleDOI
Photogalvanic effects for interband absorption in AlGaN∕GaN superlattices
TL;DR: The linear and circular photogalvanic effects (CPGE) induced by ultraviolet (325nm) radiation have been observed in the (0001)-oriented Al0.15Ga0.85N∕GaN superlattices.
Journal ArticleDOI
Piezo Voltage Controlled Planar Hall Effect Devices
Bao Zhang,Kangkang Meng,Meiyin Yang,K. W. Edmonds,Hao Zhang,Kaiming Cai,Yu Sheng,Nan Zhang,Yang Ji,Jianhua Zhao,Kaiyou Wang +10 more
TL;DR: In this paper, a planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages, which is associated with magnetization switching through 90 in the plane under piezo voltage.
Journal ArticleDOI
Datta-Das-type spin-field-effect transistor in the nonballistic regime
Munekazu Ohno,Kanji Yoh +1 more
TL;DR: In this paper, the applicability of original Datta-Das proposal for spin-field effect transistor (spin-FET) to non-ballistic regime based on semi-empirical Monte Carlo simulation for spin transport is analyzed.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
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On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.