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Journal ArticleDOI

Electronic analog of the electro‐optic modulator

Supriyo Datta, +1 more
- 12 Feb 1990 - 
- Vol. 56, Iss: 7, pp 665-667
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
Abstract
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.

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Citations
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Spin regulation in composite spin-filter barrier devices

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Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb 2 O 7

TL;DR: In this paper, a layered perovskite of the Dion-Jacobson type was shown to be a robust ferroelectric with sufficiently strong spin-orbit coupling and spin texture reversible by electric field.
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Room-temperature electric-field controlled ferromagnetism in Mn0.05Ge0.95 quantum dots.

TL;DR: A successful demonstration of electric-field control of ferromagnetism in the Mn(0.05)Ge( 0.95) quantum dots up to 300 K is reported, showing that, by using quantum structure, high-quality material can be obtained and effective hole mediation due to quantum confinement effect can be achieved.
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A Spin-Diode Logic Family

TL;DR: In this article, magnetoresistive semiconductor heterojunctions are used to produce the first complete logic family based solely on diodes, which allows for the execution of logic circuits that are faster, smaller and dissipate less power than conventional architectures.
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Thin films of the Heusler alloys Cu2MnAl and Co2MnSi: recovery of ferromagnetism via solid-state crystallization from the x-ray amorphous state

TL;DR: In this paper, the saturation magnetization of the Co2MnSi alloy reached 5.1?B/f. at 4?K, corresponding to 100% of the theoretical value.
References
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Journal ArticleDOI

Oscillatory effects and the magnetic susceptibility of carriers in inversion layers

TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI

Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.

TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI

Spin splitting in semiconductor heterostructures for B-->0.

TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{ e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI

On the possibility of transistor action based on quantum interference phenomena

TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI

Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0

TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.
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