Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
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TLDR
In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.Abstract:
We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.read more
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Room temperature ferromagnetism in Tb-doped ZnO dilute magnetic semiconducting nanoparticles
TL;DR: In this article, the effect of Tb-doping on structural, optical and magnetic properties of ZnO nanoparticles has been studied, showing that the doping Tb changes crystallographic structure generating non-radiative oxygen vacancies.
Journal ArticleDOI
Electrical Spin Injection into InN Semiconductor Nanowires
Sebastian Heedt,Caitlin Morgan,K. Weis,Daniel E. Bürgler,Raffaella Calarco,Hilde Hardtdegen,Detlev Grützmacher,Th. Schäpers,Th. Schäpers +8 more
TL;DR: Using a newly developed preparation scheme, the first unequivocal evidence of spin injection into III-V semiconductor nanowires is presented, able to surmount shadowing effects during the metal deposition and avoid strong local anisotropies that arise if the ferromagnetic leads are wrapping around the nanowire.
Journal ArticleDOI
Piezo Voltage Controlled Planar Hall Effect Devices.
Bao Zhang,Kangkang Meng,Meiyin Yang,K. W. Edmonds,Hao Zhang,Kaiming Cai,Yu Sheng,Nan Zhang,Yang Ji,Jianhua Zhao,Houzhi Zheng,Kaiyou Wang +11 more
TL;DR: In this paper, a planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages, which is associated with magnetization switching through 90° in the plane under piezo voltage.
Journal ArticleDOI
Rashba spin splitting in quantum wires
Michele Governale,Ulrich Zülicke +1 more
TL;DR: In this paper, an overview of results pertaining to electronic structure, transport properties, and interaction effects in ballistic quantum wires with Rashba spin splitting is presented, and a description for interacting Rashba-split quantum wires is developed, which is based on a generalization of the Tomonaga-Luttinger model.
Journal ArticleDOI
Spin controlled optically pumped vertical cavity surface emitting laser
TL;DR: In this paper, the output polarisation of VCSELs with spin polarised electrical pumping was shown to be unambiguously controlled by the pump polarisation, even with low spin injection efficiencies.
References
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Journal ArticleDOI
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
Journal ArticleDOI
Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: A new technique to measure conduction electron relaxation times is described, using nonequilibrium magnetization present in a paramagnetic metal can be detected as an open circuit voltage across an interface between the paramagnet and a ferromagnet.
Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
Journal ArticleDOI
On the possibility of transistor action based on quantum interference phenomena
TL;DR: In this article, a theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented, and the results resemble the well-known solutions for the electromagnetic field in waveguides with the main difference that penetration of the wave function of the electrons can be controlled by external voltages.
Journal ArticleDOI
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
Biswajit Das,D. C. Miller,Supriyo Datta,Ronald G. Reifenberger,W. P. Hong,P. K. Bhattacharya,Jasprit Singh,M. Jaffe +7 more
TL;DR: In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.