Journal ArticleDOI
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
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TLDR
In this paper, the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field effect transistors with double pulse measurements was investigated.Abstract:
We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p-GaN gate devices and device simulations. We find that, under gate stress, in the case of high-leakage Schottky contact, a negative threshold voltage shift results from hole accumulation in the p-GaN region. Conversely, in the case of low-leakage Schottky contact, hole depletion in the p-GaN region gives rise to a positive threshold voltage shift. More generally, we show that an imbalance between the hole tunneling current through the Schottky barrier and the thermionic current across the AlGaN barrier results in a variation of the total charge stored in the p-GaN region, which in turn is responsible for the observed threshold voltage shift. Finally, we present a simplified equivalent circuit model for the p-GaN gate module.read more
Citations
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Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
TL;DR: This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology, with a special focus on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT).
Journal ArticleDOI
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs
Jin Wei,Ruiliang Xie,Han Xu,Hanxing Wang,Yuru Wang,Mengyuan Hua,Kailun Zhong,Gaofei Tang,Jiabei He,Meng Zhang,Kevin J. Chen +10 more
TL;DR: The drain induced dynamic threshold voltage shift is investigated, and the underlying mechanisms are explained with a charge storage model.
Journal ArticleDOI
V TH Instability of ${p}$ -GaN Gate HEMTs Under Static and Dynamic Gate Stress
TL;DR: In this paper, the impacts of static and dynamic gate stress on threshold voltage instability in Schottky-type AlGaN/GaN heterojunction field-effect transistors are experimentally investigated.
References
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Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Journal ArticleDOI
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
In-jun Hwang,Jongseob Kim,Hyuk Soon Choi,Hyoji Choi,Jaewon Lee,Kyung Yeon Kim,Jong-Bong Park,Jae Cheol Lee,Jong-Bong Ha,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +11 more
TL;DR: In this paper, the impact of gate metals on the threshold voltage and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated.
Journal ArticleDOI
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
TL;DR: In this paper, an enhancement mode AlGaN/GaN heterojunction field-effect transistor (HFET) with selectivity grown pn junction gate is presented, which enables both depletion and enhancement mode HFETs to be fabricated on the same wafer.
Journal ArticleDOI
Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
Tian-Li Wu,Denis Marcon,Shuzhen You,Niels Posthuma,Benoit Bakeroot,Steve Stoffels,Marleen Van Hove,Guido Groeseneken,Stefaan Decoutere +8 more
TL;DR: In this paper, the temperature dependence of the forward bias gate breakdown has been characterized for enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors.
Journal ArticleDOI
Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
TL;DR: In this paper, the gate degradation was found to be weakly dependent on temperature with an activation energy of 0.1 eV, and the maximum allowed gate operating voltage was estimated using the Weibull statistics.