Journal ArticleDOI
Nanoscale resistive switching memory devices: a review.
TLDR
The suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed.Abstract:
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I-V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed.read more
Citations
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Journal ArticleDOI
Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier
Zheng Wen,Zheng Wen,Di Wu +2 more
TL;DR: Recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier, and electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectrode interfaces are discussed with the enhancement of memory performance.
Journal ArticleDOI
Next generation ferroelectric materials for semiconductor process integration and their applications
Thomas Mikolajick,Stefan Slesazeck,Halid Mulaosmanovic,Min Hyuk Park,Simon Fichtner,Patrick D. Lomenzo,Michael J. Hoffmann,Uwe Schroeder +7 more
TL;DR: Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities as mentioned in this paper. But the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems.
Journal ArticleDOI
2022 roadmap on neuromorphic computing and engineering
TL;DR: In this article , the authors present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of the neuromorphic computing community.
Journal ArticleDOI
Roadmap on emerging hardware and technology for machine learning.
Karl K. Berggren,Qiangfei Xia,Konstantin K. Likharev,Dmitri B. Strukov,Hao Jiang,Thomas Mikolajick,Damien Querlioz,Martin Salinga,John R. Erickson,Shuang Pi,Feng Xiong,Peng Lin,Can Li,Yu Chen,Shisheng Xiong,Brian D. Hoskins,Matthew W. Daniels,Advait Madhavan,Advait Madhavan,James Alexander Liddle,Jabez J. McClelland,Yuchao Yang,Jennifer L. M. Rupp,Jennifer L. M. Rupp,Stephen S. Nonnenmann,Kwang-Ting Cheng,Nanbo Gong,Miguel Angel Lastras-Montano,A. Alec Talin,Alberto Salleo,Bhavin J. Shastri,Thomas Ferreira de Lima,Paul R. Prucnal,Alexander N. Tait,Yichen Shen,Huaiyu Meng,Charles Roques-Carmes,Zengguang Cheng,Zengguang Cheng,Harish Bhaskaran,Deep Jariwala,Han Wang,Jeffrey M. Shainline,Kenneth Segall,Jianhua Yang,Kaushik Roy,Suman Datta,Arijit Raychowdhury +47 more
TL;DR: The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.
Journal ArticleDOI
Ferroic tunnel junctions and their application in neuromorphic networks
TL;DR: The goal is to give a broad review of ferroic tunnel junction based artificial synapses that can be applied to neuromorphic computing and to help further ongoing research in this field.
References
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
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