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Jing Guo

Researcher at Shanghai Jiao Tong University

Publications -  586
Citations -  44712

Jing Guo is an academic researcher from Shanghai Jiao Tong University. The author has contributed to research in topics: Large Hadron Collider & Higgs boson. The author has an hindex of 85, co-authored 566 publications receiving 39436 citations. Previous affiliations of Jing Guo include Tsinghua University & Politehnica University of Bucharest.

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Search for dark matter produced in association with a single top quark in $\sqrt{s}=13$ TeV $pp$ collisions with the ATLAS detector

Georges Aad, +2983 more
- 01 Oct 2021 - 
TL;DR: In this article, a search for dark matter in the context of a two-Higgs-doublet model together with an additional pseudoscalar mediator, $a$, which decays into the dark-matter particles is presented.
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Ab initio quantum transport simulation of silicide-silicon contacts

Qun Gao, +1 more
- 05 Jan 2012 - 
TL;DR: In this paper, the authors developed ab initio quantum transport simulation capabilities for silicide-silicon contacts, which provided first principle descriptions of interfacial structural, electronic, and transport properties.

Search for Dark Matter Candidates and Large Extra Dimensions in Events with a Photon and Missing Transverse Momentum in pp Collision Data at √s=7 TeV with the ATLAS Detector

Georges Aad, +2892 more
TL;DR: In this article, a search for new phenomena in events with an energetic photon and large missing transverse momentum in proton-proton collisions at √ s = 7 TeV is reported.
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Search for heavy resonances decaying into a W or Z boson and a Higgs boson in final states with leptons and b-jets in 36 fb(-1) of root s=13 TeV pp collisions with the ATLAS detector

Morad Aaboud, +2963 more
- 28 Mar 2018 - 
TL;DR: In this paper, a search was conducted for new resonances decaying into a W or Z boson and a 125 GeV Higgs boson in the νν¯ bb¯, l±νbb¯, and l+l−bb¯ final states, where l± = e± or μ±.
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A Computational Study of Vertical Partial-Gate Carbon-Nanotube FETs

Youngki Yoon, +2 more
- 01 Jan 2008 - 
TL;DR: In this article, a self-consistent atomistic approach was used to simulate a vertical partial-gate carbon-nanotube (CNT) field effect transistor (FET) with a gate length that covers only 1/6 of the channel length.