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Jing Guo

Researcher at Shanghai Jiao Tong University

Publications -  586
Citations -  44712

Jing Guo is an academic researcher from Shanghai Jiao Tong University. The author has contributed to research in topics: Large Hadron Collider & Higgs boson. The author has an hindex of 85, co-authored 566 publications receiving 39436 citations. Previous affiliations of Jing Guo include Tsinghua University & Politehnica University of Bucharest.

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Search for low-mass resonances decaying into two jets and produced in association with a photon using pp collisions at √s=13 TeV with the ATLAS detector

Morad Aaboud, +2937 more
- 10 Aug 2019 - 
TL;DR: In this article, a search is performed for localised excesses in dijet mass distributions of low-dijet-mass events produced in association with a high transverse energy photon.
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Measurements of differential cross sections of top quark pair production in association with jets in pp collisions at √s=13 TeV using the ATLAS detector

Morad Aaboud, +2956 more
TL;DR: In this paper, the authors presented measurements of differential cross sections of top quark pair production in association with jets by the ATLAS experiment at the LHC and performed as functions of the top-quark transverse momentum.
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Identification of high transverse momentum top quarks in pp collisions at √s=8 TeV with the ATLAS detector

Georges Aad, +2902 more
TL;DR: In this article, the performance of several jet-substructure techniques, which are used to identify hadronically decaying top quarks with high transverse momentum contained in large-radius jets, is analyzed.
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Search for top squarks decaying to tau sleptons in pp collisions at s=13 TeV with the ATLAS detector

Morad Aaboud, +2937 more
- 27 Mar 2018 - 
TL;DR: In this paper, a search for direct pair production of top squarks in final states with two tau leptons, b-jets, and missing transverse momentum is presented.
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Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical Model

TL;DR: In this article, a simple analytical model for currentvoltage (I-V) characteristics of the NB-TFTs (below the global percolation limit) is proposed and validated by numerical simulation and experimental data.