Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a education organization based out in Topi, Pakistan. It is known for research contribution in the topics: Thin film & Quantum efficiency. The organization has 618 authors who have published 940 publications receiving 10674 citations.

Humidity sensitive organic field effect transistor

Abstract: This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor. The organic field effect transistor was fabricated on thoroughly cleaned glass substrate, in which the junction between the metal gate and the organic channel plays the role of gate dielectric. Thin films of organic semiconductor copper phthalocynanine (CuPc) and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes. The output and transfer characteristics of the fabricated device were performed. The effect of humidity on the drain current, drain current-drain voltage relationship, and threshold voltage was investigated. It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction*

Abstract: A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30–40 μm. For the current–voltage (I–V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120–150. Under the switching condition, the electric current increases ~ 80–100 times. A comparison between the forward and reverse I–V characteristics shows the presence of rectifying behavior.